Fairchild Semiconductor HGTP20N60C3R, HGT1S20N60C3RS Datasheet

SEMICONDUCTOR

HGTG20N60C3R, HGTP20N60C3R,

HGT1S20N60C3R, HGT1S20N60C3RS

January 1997

40A, 600V, Rugged UFS Series N-Channel IGBTs

Features

• 40A, 600V TJ = 25oC

• 600V Switching SOA Capability

• Typical Fall Time at T

• Short Circuit Rating at T

= 150oC . . . . . . . . . . . . . 330ns

= 150oC. . . . . . . . . . . . . 10µs

• Low Conduction Loss

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP20N60C3R TO-220AB 20N60C3R

HGTG20N60C3R TO-247 20N60C3R

HGT1S20N60C3R TO-262AA 20N60C3R

HGT1S20N60C3RS TO-263AB 20N60C3R

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N60C3RS9A.

Description

This family of IGBTs was designed for optim um performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices demonstrate RUGGED performance capability when subjected to harsh SHORT CIRCUIT WITHSTAND TIME (SCWT) conditions. The parts have ULTRAFAST (UFS) switching speed while the on-state conduction losses have been kept at a low level.

The electrical speciﬁcations include typical Turn-On and Turn-Off dv/dt r atings. These ratings and the Turn-On ratings include the effect of the diode in the test circuit (Figure 16). The data was obtained with the diode at the same T

as the

IGBT under test. Formerly Developmental Type TA49047.

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

Packaging

JEDEC STYLE TO-247 JEDEC TO-220AB (ALTERNATE VERSION)

JEDEC TO-263AB JEDEC TO-262AA

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR (FLANGE)

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright

5-3

File Number 4226.1

HGTP20N60C3R, HGTG20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Speciﬁed

ALL TYPES UNITS

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C25

C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T Power Dissipation Total at T

Power Dissipation Derating T

= 150oC, Fig. 12 . . . . . . . . . . . . . . . . . . . . . .SSOA 80A at 600V

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T

GES

GEM

ARV

, T

STG

Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at V

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . t

40 A 20 A 80 A

±20 V ±30 V

164 W

100 mJ

-40 to 150 260

10 µs

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Speciﬁcations T

= 440V, TJ = 150oC, RGE = 10Ω.

CE(PK)

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector-Emitter Breakdown Voltage BV Emitter-Collector Breakdown Voltage BV Collector-Emitter Leakage Current I

Collector-Emitter Saturation Voltage V

Gate-Emitter Threshold Voltage V

Gate-Emitter Leakage Current I

CESIC ECSIC

CES

CE(SAT)IC

GE(TH)IC

GES

Switching SOA (See Figure 12) SSOA T

= 250µA, VGE= 0V 600 - - V = 10mA, VGE= 0V 15 - - V

VCE = BV

= BV

= I

C110

VGE = 15V

= 250µA,

VCE = V

CES CES

TC = 25oC - - 250 µA TC = 150oC - - 3.0 mA TC = 25oC - 1.8 2.2 V

= 150oC - 2.1 2.5 V

TC = 25oC 3.5 6.3 7.5 V

VGE = ±20V - - ±100 nA

= 150oC

RG = 10Ω

CE(PK)

L = 1mH

= 600V

80 - - A

VGE = 15V Gate-Emitter Plateau Voltage V On-State Gate Charge Q

Current Turn-On Delay Time t

D(ON)I

Current Rise Time t Current Turn-Off Delay Time t

D(OFF)I

Current Fall Time t Turn-Off Voltage dv/dt (Note 3) dV Turn-On Voltage dv/dt (Note 3) dV Turn-On Energy (Note 4) E Turn-Off Energy (Note 5) E Thermal Resistance R

GEP

G(ON)IC

IC = I

VCE = 0.5 BV

TJ = 150oC

ICE = I

CE(PK)

VGE= 15V

FI CE CE

ON OFF

θJC

RG= 10Ω L = 1mH

/dt - 1.3 - V/ns

Diode used in test circuit

/dt - 7.0 - V/ns

RURP1560 at 150oC

= I

C110 C110

C110

, VCE = 0.5 BV ,

= 0.8 BV

CES

- 9.0 - V

VGE = 15V - 87 110 nC

= 20V - 116 150 nC

-34- ns

-40- ns

- 390 500 ns

- 330 400 ns

- 2.3 - mJ

- 3.0 - mJ

- - 0.76

C/W

NOTES:

3. dV

/dt depends on the diode used and the temperature of the diode.

4. Turn-On Energy Loss (EON) includes diode losses and is defined as the integral of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the collector voltage equals V

. This value of EON was obtained with a

CE(ON)

RURP1560 diode at TJ = 150oC. A different diode or temperature will result in a diff erentEON. For example with diode at TJ = 25oCE is about one half the value at 150oC.

5. Turn-Off Energy Loss (E

) is deﬁned as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

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