Fairchild Semiconductor HGTP20N60A4, HGTG20N60A4 Datasheet

HGTG20N60A4, HGTP20N60A4

Data Sheet December 2001

600V, SMPS Series N-Channel IGBTs

The HGTG20N60A4 and HGTP20N 60A4 are M OS gated
high voltage switching devices combining the best features
of MOSFETs and bipol ar transis tors. Thes e devic es hav e the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
and 150

o

C.

o

C

This IGBT is ideal for many high voltage switchin g
applications operating at high frequencies where low
conduction losses are essential. This device has been

optimized for high frequency switch mode power
supplies.

Formerly Developmental Type TA49339.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP20N60A4 TO-220AB 20N60A4
HGTG20N60A4 TO-247 20N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• >100kHz Operation at 390V, 20A

• 200kHz Operation at 390V, 12A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T

• Low Conduction Loss

• Temperature Compe nsating SABER™ Model
www.intersil.com

• Related Literature

- TB334 “Guidelines f or Solde ring Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

COLLECTOR

(FLANGE)

E

C

G

= 125oC

J

JEDEC STYLE TO-247

E

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

C

G

COLLECTOR

(FLANGE)

©2001 Fairchild Semiconductor Corpo ration HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HGTG20N60A4, HGTP20N60A4 UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Pow er Dissi pation Total at T

C

Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

CM

GES

GEM

D

, T

J

STG

Maximum Lead T emperature f or Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

70 A
40 A

280 A

±20 V
±30 V

290 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, V

= 0V 15 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--2.0mA

J

= 20A,

V

GE

= 15V

T

= 25oC-1.82.7V

J

T

= 125oC-1.62.0V

J

IC = 250µA, VCE = 600V 4.5 5.5 7.0 V
VGE = ±20V - - ±250 nA

= 150oC, RG = 3Ω, VGE = 15V

J

L = 100µH, V

CE

= 600V

100 - - A

IC = 20A, VCE = 300V - 8.6 - V
IC = 20A,

= 300V

V

CE

IGBT and Diode at TJ = 25oC

= 20A

I

CE

V

= 390V

CE

=15V

V

GE

= 3Ω

R

G

L = 500µH
Test Circuit (Figure 20)

V

= 15V - 142 162 nC

GE

V

= 20V - 182 210 nC

GE

-15- ns

-12- ns

-73- ns

-32- ns

- 105 - µJ

- 280 350 µJ

- 150 200 µJ

©2001 Fairchild Semiconductor Corpo ration HGTG20N60A4, HGTP20N60A4 Rev. B

HGTG20N60A4, HGTP20N60A4

Electrical Specifications

TJ = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
I

= 20A

CE

= 390V

V

CE

= 15V

V

GE

R

= 3Ω

G

L = 500µH
Test Circuit (Figure 20)

NOTES:

2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

Typical Performance Curves

100

DIE CAPABILITY

80

Unless Otherwise Specified

V

= 15V

GE

120

TJ = 150oC, RG = 3Ω, V

100

-1521ns

-1318ns

- 105 135 ns

-5573ns

- 115 - µJ

- 510 600 µJ

- 330 500 µJ

- - 0.43

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 100µH

GE

o

C/W

ON2

PACKAGE LIMIT

60

40

20

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERA TURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

300

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)
= 0.43oC/W, SEE NOTES

R

ØJC

TJ = 125oC, RG = 3Ω, L = 500µH, V

5

I

, OPERATING FREQUENCY (kHz)

MAX

f

100

40

d(OFF)I

, COLLECTOR TO EMITTER CURRENT (A)

CE

ON2

+ t

d(ON)I

+ E

OFF

)

)

= 390V

CE

TCV

o

75

C

GE

15V

4030

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O

EMITTER CURRENT

80

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

VCE = 390V, RG = 3Ω, TJ = 125oC

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

5010 20

10 11 12 15

VGE, GATE TO EMITTE R VOLTAGE (V)

I

SC

t

SC

13 14

45014

400

350

300

250

200

150

100

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2001 Fairchild Semiconductor Corpo ration HGTG20N60A4, HGTP20N60A4 Rev. B