Fairchild Semiconductor HGTP12N60A4, HGTG12N60A4 Datasheet

HGTP12N60A4, HGTG12N60A4,

HGT1S12N60A4S9A

Data Sheet August 2003

600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transis tor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49335.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP12N60A4 TO-220AB 12N60A4
HGTG12N60A4 TO-247 12N60A4
HGT1S12N60A4S9A TO-263AB 12N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• >100kHz Operation at 390V, 12A

• 200kHz Operation at 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

COLLECTOR
(FLANGE)

JEDEC TO-263AB

= 125oC

J

E
C
G

G

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

E

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE METAL)

COLLECTOR
(FLANGE)

E

C

G

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG12N60A4, HGTP12N60A4,

HGT1S12N60A4S9A UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

At T

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

C

= 110oC

At T

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

C25

CM

GES

GEM

D

, T

J

STG

Maximum Lead T emperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

54 A
23 A
96 A

±20 V
±30 V

167 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V

= 0V 20 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--2.0mA

J

= 12A,

V

GE

= 15V

T

= 25oC-2.02.7V

J

T

= 125oC-1.62.0V

J

IC = 250µA, VCE = 600V - 5.6 - V
VGE = ±20V - - ±250 nA

= 150oC, RG = 10Ω, VGE = 15V

J

L = 100µH, V

CE

= 600V

60 - - A

IC = 12A, VCE = 300V - 8 - V
IC = 12A,

= 300V

V

CE

IGBT and Diode at TJ = 25oC
I

= 12A

CE

= 390V

V

CE

=15V

V

GE

R

= 10Ω

G

L = 500µH
Test Circuit (Figure 20)

V

= 15V - 78 96 nC

GE

V

= 20V - 97 120 nC

GE

-17- ns

-8-ns

-96- ns

-18- ns

-55- µJ

- 160 - µJ

-50- µJ

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2

HGTP12N60A4, HGTG12N 60A4, HGT1S12N60A4S9A

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
I

= 12A

CE

= 390V

V

CE

= 15V

V

GE

R

= 10Ω

G

L = 500µH
Test Circuit (Figure 20)

NOTES:

2. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

Typical Performance Curves Unless Otherwise Specified

60

50

V

= 15V

GE

70

TJ = 150oC, RG = 10Ω, V

60

-17- ns

-16- ns

- 110 170 ns

-7095ns

-55- µJ

- 250 350 µJ

- 175 285 µJ

- - 0.75

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 200µH

GE

o

C/W

ON2

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

V

T

300

100

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)
= 0.75oC/W, SEE NOTES

R

ØJC

, OPERATING FREQUENCY (kHz)

MAX

TJ = 125oC, RG = 10Ω, L = 500µH, V

f

10

1

I

CE

d(OFF)I

3

, COLLECTOR TO EMITTER CURRENT (A)

+ t

ON2

d(ON)I

+ E

OFF

)

)

CE

= 390V

75

C

o

15V

C

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT

GE

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

20

VCE = 390V, RG = 10Ω, TJ = 125oC

18
16
14
12
10

8
6
4
2

, SHORT CIRCUIT WITHSTAND TIME (µs)

0

SC

t

3010 20

9101112 15

V

, GATE TO EMITTER V OLTAGE (V)

GE

I

SC

t

SC

13 14

300
275
250
225
200
175
150
125
100
75

50

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2003 Fairchild Semiconductor Corporation HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2