Fairchild Semiconductor HGTP10N120BN, HGT1S10N120BNS Datasheet

HGTG10N120BN, HGTP10N120BN,

HGT1S10N120BNS

Data Sheet August 2002

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on­state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, pow er su ppl ies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49290.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG10N120BN TO-247 G10N120BN
HGTP10N120BN TO-220AB 10N120BN
HGT1S10N120BNS TO-263AB 10N120BN

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.

Features

• 35A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC STYLE TO-247

E

COLLECTOR

(FLANGE)

C

= 150oC

J

G

Symbol

C

JEDEC TO-220AB (ALTERNATE VERSION)

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(FLANGE)

G

E

C

G

JEDEC TO-263AB

COLLECTOR

(FLANGE)

E

©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG10N120BN
HGTP10N120BN

HGT1S10N120BNS UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 55A at 1200V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.38 W/oC

C

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

CM

GES

GEM

D

AV

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

L

pkg

SC
SC

35 A
17 A
80 A

±20 V
±30 V

298 W

80 mJ

-55 to 150

300
260

8 µs

15 µs

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.
= 20A, L = 400µH, TJ = 25oC.

2. I

CE

3. V

= 840V, TJ = 125oC, RG = 10Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES

ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, V

= 0V 15 - - V

GE

VCE = 1200V TC = 25oC - - 250 µA

T

= 125oC - 150 - µA

C

T

= 150oC--2mA

C

= 10A,

V

= 15V

GE

IC = 90µA, VCE = V

= 25oC - 2.45 2.7 V

T

C

T

= 150oC-3.74.2V

C

GE

6.0 6.8 - V

VGE = ±20V - - ±250 nA

= 150oC, RG = 10Ω, VGE = 15V,

J

L = 400µH, V

CE(PK)

= 1200V

55 - - A

IC = 10A, VCE = 600V - 10.4 - V
IC = 10A,

= 600V

V

CE

V

= 15V - 100 120 nC

GE

V

= 20V - 130 150 nC

GE

©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R

rI

fI

ON1

ON2

OFF

rI

fI

ON1

ON2

OFF

θJC

IGBT and Diode at TJ = 25oC

10A

I

CE =

= 960V

V

CE

V

= 15V

GE

= 10Ω

R

G

L = 2mH
Test Circuit (Figure 18)

IGBT and Diode at TJ = 150oC

= 10A

I

CE

= 960V

V

CE

V

= 15V

GE

= 10Ω

R

G

L = 2mH
Test Circuit (Figure 18)

NOTES:

4. Turn-Off Energy Loss (E

at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 18.

-2326ns

-1115ns

- 165 210 ns

- 100 140 ns

-0.320.4mJ

-0.851.1mJ

-0.81.0mJ

-2125ns

-1115ns

- 190 250 ns

- 140 200 ns

-0.40.5mJ

-1.752.3mJ

-1.11.4mJ

- - 0.42

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

o

C/W

ON2

Typical Performance Curves Unless Otherwise Specified

35

30

25

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

= 15V

V

GE

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

©2002 Fairchild Semiconductor Corporation HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1

60

50

TJ = 150oC, RG = 10Ω, V

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 15V, L = 400µH

GE

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA