Fairchild Semiconductor HGTG40N60A4 Datasheet

HGTG40N60A4

Data Sheet August 2003

600V, SMPS Series N-Channel IGBT

The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25

o

C and 150oC. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.

Formerly Developmental Type TA49347.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG40N60A4 TO-247 40N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

File Number

Features

• 100kHz Operation At 390V, 40A

• 200kHz Operation At 390V, 20A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at T

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(BACK METAL)

= 125

J

o

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2003 Fairchild Semiconductor Corporation HGTG40N60A4 Rev. B2

HGTG40N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG40N60A4 UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 200A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead T emperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

C25

C110

CM

GES

GEM

D

, T

J

STG

L

75 A
63 A

300 A

±20 V
±30 V

625 W

-55 to 150
260

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications TJ = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, VGE = 0V 20 - ­VCE = BV

CES

= 40A,

= 15V

V

GE

IC = 250µA, VCE = V

TJ = 25oC - - 250 µA

= 125oC--3.0mA

T

J

T

= 25oC-1.72.7V

J

T

= 125oC-1.52.0V

J

GE

4.5 5.6 7 V

VGE = ±20V - - ±250 nA

= 150oC, RG = 2.2Ω, VGE = 15V

J

L = 100µH, V
IC = 40A, VCE = 0.5 BV
IC = 40A,

V

= 0.5 BV

CE

CE

CES

= 600V

CES

VGE = 15V - 350 405 nC
V

= 20V - 450 520 nC

GE

IGBT and Diode at TJ = 25oC

= 40A

I

CE

= 0.65 BV

V

CE

CES

VGE = 15V

= 2.2Ω

R

G

L = 200µH
Test Circuit (Figure 20)

200 - - A

-8.5- V

-25- ns

-18- ns

- 145 - ns

-35- ns

- 400 - µJ

- 850 - µJ

- 370 - µJ

©2003 Fairchild Semiconductor Corporation HGTG40N60A4 Rev. B2

CO

C

O

O

C

(

)

HGTG40N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 3) E
Turn-On Energy (Note 3) E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC

= 40A

I

CE

= 0.65 BV

V

CE

CES

VGE = 15V

= 2.2Ω

R

G

L = 200µH
Test Circuit (Figure 20)

NOTES:

2. T urn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous po wer loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Devi ce Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T

ON1

as the IGBT. The diode type is specified in Figure 20.

J

Typical Performance Curves Unless Otherwis e Specified

-27- ns

-20- ns

- 185 225 ns

-5595ns

- 400 - µJ

- 1220 1400 µJ

- 700 800 µJ

--0.2oC/W

is the turn-on loss of the IGBT only. E

ON2

is

225

80

70

PACKAGE LIMITED

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

FIGURE 1. DC COLLECTOR CURRENT vs CASE

GE

= 15V

A

TJ = 150oC, RG = 2.2Ω, V

200
175

URRENT

150
125

EMITTER

100

R T

75

T

50

LLE

25

,

CE

0

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 15V, L = 100µH

GE

300 400200100 500 600

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

700

TEMPERATURE

©2003 Fairchild Semiconductor Corporation HGTG40N60A4 Rev. B2