Fairchild Semiconductor HGTG30N60B3 Datasheet

Data Sheet August 2003

HGTG30N60B3

60A, 600V, UFS Series N-Channel IGBT

The HGTG30N60B3 is a MOS gated high voltage switching
device com binin g the b est f e atures of MO SFETs a nd bip olar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, pow er su ppl ies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49170.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60B3 TO-247 G30N60B3

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• 60A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(BACK METAL)

= 150oC

J

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2003 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. B2

HGTG30N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG30N60B3 UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC

C

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead T emperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

C25

C110

CM

GES

GEM

D

ARV

, T

J

STG

L
SC
SC

60 A
30 A

220 A

±20 V
±30 V

208 W

100 mJ

-55 to 150
260

4 µs

10 µs

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 3Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V
VCE = BV

= I

C110

= 15V

V

GE

IC = 250µA, VCE = V

= 0V 20 - - V

GE

CES

,

TC = 25oC - - 250 µA
T

= 150oC--3.0mA

C

T

= 25oC - 1.45 1.9 V

C

T

= 150oC-1.72.1V

C

GE

4.2 5.0 6.0 V

VGE = ±20V - - ±250 nA

= 150oC,

J

= 3Ω,

R

G

= 15V,

V

GE

V

CE (PK)

V

CE (PK)

= 480V 200 - - A
= 600V 60 - - A

L = 100µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

GEP

G(ON)

rI

fI
ON1
ON2
OFF

IC = I
IC = I

V

CE

IGBT and Diode at TJ = 25oC
I

CE

VCE = 0.8 BV
VGE = 15V
R

G

L = 1mH
Test Circuit (Figure 17)

C110
C110

= 0.5 BV

= I

C110

= 3Ω

, VCE = 0.5 BV
,

VGE = 15V - 170 190 nC

CES

V

CES

CES

= 20V - 230 250 nC

GE

-7.2- V

-36- ns

-25- ns

- 137 - ns

-58- ns

- 500 - µJ

- 550 800 µJ

- 680 900 µJ

©2003 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. B2

HGTG30N60B3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
I

= I

CE

C110

VCE = 0.8 BV
VGE = 15V
R

= 3Ω

G

CES

L = 1mH
Test Circuit (Figure 17)

NOTES:

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 17.

Typical Performance Curves Unless Otherwise Specified

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

V

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

GE

= 15V

225

TJ = 150oC, RG = 3Ω, V

200
175
150
125
100

75
50
25

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

100 500 600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

-32- ns

-24- ns

- 275 320 ns

- 90 150 ns

- 500 - µJ

- 1300 1550 µJ

- 1600 1900 µJ

--0.6oC/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L =100µH

GE

200

300 400

ON2

700

100

10

f

= 0.05 / (t

MAX1

, OPERATING FREQUENCY (kHz)

MAX

f

1

0.1

= (PD - PC) / (E

f

MAX2

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

R

= 0.6oC/W, SEE NOTES

ØJC

5

I

d(OFF)I

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

TJ = 150oC, RG = 3Ω, L = 1mH,

T

)

75

)

OFF

110
110oC10V

C

o

C

o

75

C10V

o

C

+ t

ON2

d(ON)I

+ E

V
15V

15V

GE

V

= 480V

CE

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

20

VCE = 360V, RG = 3Ω, TJ = 125oC

18 450

16

14

12

10

8

, SHORT CIRCUIT WITHSTAND TIME (µs)

6

6020 40

SC

t

10 11 12 13 14 15

V

, GATE TO EMITTER VOLTAGE (V)

GE

I

SC

t

SC

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

500

400

350

300

250

200

150

EMITTER CURRENT

©2003 Fairchild Semiconductor Corporation HGTG30N60B3 Rev. B2

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I