Fairchild Semiconductor HGTG30N60A4 Datasheet

HGTG30N60A4

Data Sheet August 2003

600V, SMPS Series N-Channel IGBT

The HGTG30N60A4 is a MOS gated high voltage switching
device com binin g the b est f e atures of MO SFETs a nd bip olar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49343.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG30N60A4 TO-247 G30N60A4

NOTE: When ordering, use the entire part number.

Symbol

C

File Number 4829

Features

• >100kHz Operation at 390V, 30A

• 200kHz Operation at 390V, 18A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at T

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

= 125oC

J

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

COLLECTOR

(BACK METAL)

©2003 Fairchild Semiconductor Corporation HGTG30N60A4 Rev. B1

HGTG30N60A4

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG30N60A4 UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At T

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Cu rrent Pulsed (No te 1) . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC, Figure 2 . . . . .SSOA 150A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.7 W/oC

C

Operating and Storage Junction Temperature Range . . . . .T

C25

C110

CM

GES

GEM

D

, T

J

STG

Maximum Lead T emperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

PKG

75 A
60 A

240 A

±20 V
±30 V

463 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. Pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, V

= 0V 20 - - V

GE

VCE = 600V TJ = 25oC - - 250 µA

T

= 125oC--4.0mA

J

= 30A,

V

GE

= 15V

T

= 25oC-1.82.6V

J

T

= 125oC-1.62.0V

J

IC = 250µA, VCE = 600V 4.5 5.2 7.0 V
VGE = ±20V - - ±250 nA

= 150oC, RG = 3Ω, VGE = 15V

J

L = 100µH, V

CE

= 600V

150 - - A

IC = 30A, VCE = 300V - 8.5 - V
IC = 30A,

= 300V

V

CE

IGBT and Diode at TJ = 25oC
I

= 30A

CE

= 390V

V

CE

=15V

V

GE

R

= 3Ω

G

L = 200µH
Test Circuit - (Figure 20)

V

= 15V - 225 270 nC

GE

V

= 20V - 300 360 nC

GE

-25- ns

-12- ns

- 150 - ns

-38- ns

- 280 - µJ

- 600 - µJ

- 240 350 µJ

©2003 Fairchild Semiconductor Corporation HGTG30N60A4 Rev. B1

HGTG30N60A4

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

J

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 2) E
Turn-On Energy (Note 2) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 125oC
I

= 30A

CE

= 390V

V

CE

= 15V

V

GE

R

= 3Ω

G

L = 200µH
Test Circuit - (Figure 20)

NOTES:

2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 20.

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

60

70
60

50
40

30

V

= 15V

GE

200

TJ = 150oC, RG = 3Ω, V

150

100

-24- ns

-11- ns

- 180 200 ns

-5870ns

- 280 - µJ

- 1000 1160 µJ

- 450 750 µJ

- - 0.27

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 500µH

GE

o

C/W

ON2

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

500

300

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

100

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

R

= 0.27oC/W, SEE NOTES

ØJC

, OPERATING FREQUENCY (kHz)

MAX

TJ = 125oC, RG = 3Ω, L = 200µH, V

f

30

3

d(OFF)I

ICE, COLLECTOR TO EMITTER CURRENT (A)

+ t

ON2

d(ON)I

+ E

OFF

)

)

= 390V

CE

75

V

T

C

o

C

FIGURE 3. OPERA TING FREQUENCY vs COLLECTOR T O

EMITTER CURRENT

GE

15V

50

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

7000

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

18

16

14

12

10

8

6

, SHORT CIRCUIT WITHSTAND TIME (µs)

4

SC

t

6010 30

10 11 12 15

VCE = 390V, RG = 3Ω, TJ = 125oC

13 14

V

, GATE TO EMITTER V OLTAGE (V)

GE

I

SC

t

SC

900

800

700

600

500

400

300

200

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

©2003 Fairchild Semiconductor Corporation HGTG30N60A4 Rev. B1