Fairchild Semiconductor HGTG27N120BN Datasheet

HGTG27N120BN / HGT5A27N120BN

Data Sheet August 2002

72A, 1200V, NPT Series N-Channel IGBT

The HGTG27N120BN and HGT5A27N120BN are Non-
Punch Through (NPT) IGBT design. This is a new member

of the MOS gated high vol tage s w itch ing IGBT fa mily. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, pow er su ppl ies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49280.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG27N120BN TO-247 27N120BN
HGT5A27N120BN TO-247-ST 27N120BN

NOTE: When ordering, use the entire part number.

Features

• 72A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com

• Avalanche Rated

Packaging

JEDEC STYLE TO-247

E

COLLECTOR

(BOTTOM SIDE

METAL)

C

G

= 150oC

J

Symbol

C

JEDEC STYLE TO-247-ST

G

COLLECTOR

(BOTTOM SIDE

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

METAL)

E

C

G

©2002 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C1

HGTG27N120BN / HGT5A27N120BN

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG27N120BN UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

At T

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T
Powe r Dissipation Total at T

C

Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 1200V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0 W/oC

C

Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead T emperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

C25

C110

CM

GES

GEM

D

AV

, T

J

STG

L
SC
SC

72 A
34 A

216 A

±20 V
±30 V

500 W

135 mJ

-55 to 150
260

8 µs

15 µs

o

C

o

C

NOTES:

1. Pulse width limited by Max junction temperature.
= 30A, L = 400µH, TJ = 125oC

2. I

CE

3. V

= 960V, TJ = 125oC, RG = 3Ω.

CE(PK)

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 1200 - - V
IC = 10mA, V

= 0V 15 - - V

GE

VCE = 1200V TC = 25oC - - 250 µA

= 125oC - 300 - µA

T

C

T

= 150oC--4mA

C

= 27A,

= 15V

V

GE

IC = 250µA, VCE = V

T

= 25oC - 2.45 2.7 V

C

= 150oC-3.84.2V

T

C

GE

66.6 - V

VGE = ±20V - - ±250 nA

= 150oC, RG = 3Ω, VGE = 15V,

J

L = 200µH, V
IC = I

, VCE = 0.5 BV

C110

IC = 27A,
V

= 600V

CE

CE(PK)

= 1200V

CES

= 15V - 270 325 nC

V

GE

V

= 20V - 350 420 nC

GE

IGBT and Diode at TJ = 25oC,

= 27A,

I

CE

= 960V,

V

CE

V

= 15V,

GE

= 3Ω,

R

G

L = 1mH,
Test Circuit (Figure 18)

150 - - A

-9.2- V

-2430ns

-2025ns

- 195 240 ns

- 80 120 ns

-2.2- mJ

-2.73.3mJ

-2.32.8mJ

©2002 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C1

HGTG27N120BN / HGT5A27N120BN

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC,

= 27A,

I

CE

= 960V,

V

CE

V

= 15V,

GE

= 3Ω,

R

G

L = 1mH,
Test Circuit (Figure 18)

NOTES:

4. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 18.

Typical Performance Curves Unless Otherwise Specified

80

70

60

50

= 15V

V

GE

200

TJ = 150oC, RG = 3Ω, V

160

120

-2228ns

-2025ns

- 220 280 ns

- 140 200 ns

-2.7- mJ

-5.16.5mJ

-3.44.2mJ

- - 0.25

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 200µH

GE

o

C/W

ON2

40

30

20

, DC COLLECTOR CURRENT (A)

10

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

, OPERATING FREQUENCY (kHz)

MAX

f

100

50

10

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)

R

= 0.25oC/W, SEE NOTES

ØJC

1

5

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

TJ = 150oC, RG = 3Ω, L = 1mH, V

T

V

C

GE

o

15V

75

C

o

12V

C

75

+ t

d(OFF)I

ON2

10

d(ON)I

+ E

OFF

)

)

T

C

110
110oC

CE

V

GE

o

15V

C

12V

= 960V

80

40

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

600 800400200 1000 1200

1400

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

50

VCE = 960V, RG = 3Ω, TJ = 125oC

40

30

20

10

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

0

t

6020

11 12 13 14 15 16

VGE, GATE TO EMITTER VOLTAGE (V)

500

I

SC

400

300

200

t

SC

100

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

0

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

©2002 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C1