Fairchild Semiconductor HGTG20N60B3D Datasheet

Data Sheet December 2001

HGTG20N60B3D

40A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG20N60B3D is a MOS gated high voltage
switching device combining the best feat ures of MO SF ETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state condu ction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25

o

C and 150oC. The

diode used in anti-parallel with the IG BT is the RHRP3060.
The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low
conduction losses a re essential.

Formerly developmental type TA49016.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60B3D TO-247 G20N60B3D

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• 40A, 600V at TC = 25oC

• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC

• Short Circuit Rated

• Low Conduct ion Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR
(BOTTOM SIDE METAL)

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corpo ration HGTG20N60B3D Rev. B

HGTG20N60B3D

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

HGTG20N60B3D UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector to Gate Voltage, R

= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

GE

Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Average Diode Forward Current at 110

o

C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Pow er Dissi pation Total at T

C

Power Dissipation Derating T

= 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V

C

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Not e 2) at V
Short Circuit Withstand Time (Not e 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . t

GE

J

(AVG)

, T

CES

CGR

C25

C110

CM

GES

GEM

D

STG

L
SC
SC

600 V
600 V

40 A
20 A
20 A

160 A

±20 V
±30 V

165 W

-40 to 150
260

4 µs

10 µs

o

C

o

C

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.
= 360V, TC = 125oC, RG = 25Ω.

2. V

CE

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES

CES

CE(SAT)

GE(TH)

GES

Switching SOA SSOA T

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

IC = I
V

GE

C110

= 15V

CES

,

IC = 250µA, VCE = V

TC = 25oC - - 250 µA

= 150oC--2.0mA

T

C

T

= 25oC-1.82.0V

C

= 150oC-2.12.5V

T

C

GE

3.0 5.0 6.0 V

VGE = ±20V - - ±100 nA

= 150oC

C

V

GE

= 10Ω,

R

G

= 15V,

V

= 480V 100 - - A

CE

= 600V 30 - - A

V

CE

L = 45µH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

Thermal Resistance R

GEP

G(ON)

rI

fI

ON

OFF

EC

rr

θJC

IC = I

IC = I

V

CE

TC = 150oC,

I

CE

VCE = 0.8 BV

VGE = 15V

R

G

L = 100µH

IEC = 20A - 1.5 1.9 V

I

EC

I

EC

IGBT - - 0.76

Diode - - 1.2

, VCE = 0.5 BV

C110

,

C110

= 0.5 BV

CES

VGE = 15V - 80 105 nC

CES

= 20V - 105 135 nC

V

GE

-8.0- V

-25-ns

= I

C110

= 10Ω,

CES,

-20-ns

- 220 275 ns

- 140 175 ns

- 475 - µJ

- 1050 - µJ

= 20A, dIEC/dt = 100A/µs--55ns

= 1A, dIEC/dt = 100A/µs--45ns

o

C/W

o

C/W

NOTE:

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A) The HGTG20N60B3D was tested per JEDEC standard No. 24-1 Method for

CE

Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.

©2001 Fairchild Semiconductor Corpo ration HGTG20N60B3D Rev. B

Typical Performance Curves

HGTG20N60B3D

100

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

80

CE

= 10V

100

VGE = 15V

80

12V

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, T

TC = 150oC

60

60

TC = 25oC

40

TC = -40oC

TC = -40oC

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

46810

V

, GATE TO EMITTER VOLTAGE (V)

GE

12

40

20

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0246810

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

50

40

VGE = 15V

30

20

100

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

80

60

40

GE

TC = -40oC

= 15V

VGE = 10V

= 9V

V

GE

= 8.5V

V

GE

V

= 8.0V

GE

VGE = 7.5V
VGE = 7.0V

= 25oC

C

TC = 25oC

10

, DC COLLECTOR CURRENT (A)

CE

I

0

25 50

75

100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 3. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

5000

C

4000

IES

3000

2000

C

C, CAPACITANCE (pF)

OES

1000

C

RES

0

0 5 10 15 20 25

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

FREQUENCY = 1MHz

FIGURE 5. CAPACITANCE vs COLL ECT OR T O EMI TTER

VOLTAGE

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

012345

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

TC = 150oC

FIGURE 4. COLLECTOR TO EMITTE R ON-STATE VOLTA GE

600

480

VCE = 600V

360

240

VCE = 200V

120

, COLLECTOR TO EMITTER VOLTAGE (V)

0

CE

V

02040

Q

G

VCE = 400V

T

C

I

g(REF)

R

L

, GATE CHARGE (nC)

= 25oC

= 1.685mA

= 30Ω

80 10060

15

12

9

6

3

0

FIGURE 6. GATE CHARGE WAVEFORMS

, GATE TO EMITTER VOLTAGE (V)

GE

V

©2001 Fairchild Semiconductor Corpo ration HGTG20N60B3D Rev. B