Fairchild Semiconductor HGTG20N60B3, HGT1S20N60B3S Datasheet
HGT1S20N60B3S, HGTP20N60B3,
Data Sheet December 2001
HGTG20N60B3
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP20N60B3 and the
HGTG20N60B3 are Ge ne ra tion III MOS gated high voltage
switchi ng devices combining the best features of MOSFETs
and bipolar transistor s. These devices have the hi gh input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150oC.
The IGBT is ideal for many high voltage sw itc hi ng
applications operating at moderate frequencies where low
conduction losses are essential, such as : AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP20N60B3 TO-220AB G20N60B3
HGT1S20N60B3S TO-263AB G20N60B3
HGTG20N60B3 TO-247 HG20N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.
Symbol
C
Features
• 40A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduct ion Loss
• Related Literature
- TB334 “Guidelines f or Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
COLLECTOR
G
E
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
(FLANGE)
E
C
G
o
C
G
E
Fairchild CORPORATION IGBT PRODUCT IS COVE RED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
©2001 Fairchild Semiconductor Corpo ration HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGT1S20N60B3S
HGTP20N60B3
HGTG20N60B3 UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector to Gate Voltage, R
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
GE
CES
CGR
600 V
600 V
Collector Current Continuous
= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
At T
= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at T
Pow er Dissi pation Total at T
C
Power Dissipation Derating T
= 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 30A at 600V
C
= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
C25
C110
CM
GES
GEM
D
, T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Not e 2) at V
Short Circuit Withstand Time (Not e 2) at V
CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
GE
L
pkg
SC
SC
40 A
20 A
160 A
±20 V
±30 V
165 W
-40 to 150
300
260
4 µs
10 µs
o
C
o
C
o
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
= 360V, TC = 125oC, RG = 25Ω.
2. V
CE
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
CES
CE(SAT)IC
GE(TH)
GES
Switching SOA SSOA T
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R
GEP
G(ON)
d(ON)I
rI
d(OFF)I
fI
ON
OFF
θJC
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
CES
= I
, VGE = 15V TC = 25oC-1.82.0V
C110
IC = 250µA, VCE = V
TC = 25oC - - 250 µA
T
= 150oC--1.0mA
C
T
= 150oC-2.12.5V
C
GE
3.0 5.0 6.0 V
VGE = ±20V - - ±100 nA
= 150oC, V
C
= 10Ω, L =
15V, R
G
45µH
IC = I
IC = I
V
CE
, VCE = 0.5 BV
C110
,
C110
= 0.5 BV
TC = 150oC
= I
I
CE
C110
VCE = 0.8 BV
VGE = 15V
= 10Ω
R
G
L = 100µH
GE
CES
CES
V
=
= 480V 100 - - A
CE
V
= 600V 30 - - A
CE
CES
-8.0- V
VGE = 15V - 80 105 nC
= 20V - 105 135 nC
V
GE
-25-ns
-20-ns
- 220 275 ns
- 140 175 ns
- 475 - µJ
- 1050 - µJ
- - 0.76
NOTE:
3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
= 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
CE
Off Energy Loss. Turn-On losses include diode losses.
o
C/W
©2001 Fairchild Semiconductor Corpo ration HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B
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