Fairchild Semiconductor HGTG18N120BND Datasheet

HGTG18N120BND

Data Sheet December 2001

54A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a N on- P unch T hrough (NPT)
IGBT design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on­state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49304.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG18N120BND TO-247 18N120BND

NOTE: When ordering, use the entire part number.

Symbol

Features

• 54A, 1200V, T

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T

• Short Circuit Rating

• Low Conduction Loss

= 25

C

o

C

Packaging

JEDEC STYLE TO-247

= 150

J

o

C

C

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corporation HGTG18N120BND Rev. B

±

±

8 µ

15 µ

3

µ

µ

±

HGTG18N120BND

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

HGTG18N120BND UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

CES

1200 V

Collector Current Continuous

At T

At T

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T

Power Dissipation Total at T

Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at V

Short Circuit Withstand Time (Note 2) at V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

o

= 110

C

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

o

= 150

J

o

= 25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25

C

C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/

= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

C25

C110

CM

GES

GEM

D

, T

J

STG

L

SC

SC

54 A

26 A

160 A

20 V

30 V

390 W

-55 to 150

260

o

C

o

C

o

C

s

s

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

CE(PK)

= 960V, T

Electrical Specifications

= 125

J

o

C, R

G =

T

Ω.

o

= 25

C, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV

Emitter to Collector Breakdown Voltage BV

Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

CES

ECS

CES

CE(SAT)

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V

On-State Gate Charge Q

Current Turn-On Delay Time t

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

Turn-On Energy E

Turn-Off Energy (Note 3) E

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI

ON

OFF

I

= 250 µ A, V

C

I

= 10mA, V

C

V

= 1200V T

CE

I

= 18A,

C

V

= 15V

GE

I

= 150 µ A, V

C

V

= ± 20V - -

GE

= 150

J

L = 200 µ H, V

I

= 18A, V

C

I

= 18A,

C

V

= 600V

CE

IGBT and Diode at T
I

= 18A

CE

V

= 960V

CE

V

= 15V

GE

R

= 3 Ω

G

L = 1mH
Test Circuit (Figure 20)

= 0V 1200 - - V

GE

= 0V 15 - - V

GE

o

= 25

C - - 250

C

T

T

T

T

= V

CE

GE

o

C, R

= 3 Ω, V

G

= 1200V

CE(PK)

= 600V - 10.5 - V

CE

V

V

= 25

J

o

= 125

C

C

C

C

C - 300 -

o

= 150

C--4mA

o

= 25

C - 2.45 2.7 V

o

= 150

C - 3.8 4.2 V

6.0 7.0 - V

= 15V,

GE

= 15V - 165 200 nC

GE

= 20V - 220 250 nC

GE

o

C

100 - - A

-2328ns

-1722ns

- 170 200 ns

- 90 140 ns

- 1.9 2.4 mJ

- 1.8 2.2 mJ

A

A

250 nA

©2001 Fairchild Semiconductor Corporation HGTG18N120BND Rev. B

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

1400

80

0

I

CE

, COLLECTOR TO EMITTER CURRENT (A)

20

40

600 800400200 1000 1200

0

100

120

60

TJ = 150oC, RG = 3Ω, V

GE

= 15V, L = 200µH

HGTG18N120BND

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t

Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t

Turn-On Energy E

Turn-Off Energy (Note 3) E

Diode Forward Voltage V

Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rI

fI

ON

OFF

EC

rr

θJC

IGBT and Diode at T
I

= 18A

CE

V

= 960V

CE

V

= 15V

GE

R

= 3 Ω

G

L = 1mH
Test Circuit (Figure 20)

I

= 18A - 2.6 3.2 V

EC

I

= 18A, dI

EC

I

= 2A, dI

EC

/dt = 200A/ µ s - 60 75 ns

EC

/dt = 200A/µs - 44 55 ns

EC

IGBT - - 0.32

= 150

J

o

C

-2126ns

-1722ns

- 205 240 ns

- 140 200 ns

- 3.7 4.9 mJ

- 2.6 3.1 mJ

Diode - - 0.75

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Typical Performance Curves Unless Otherwise Specified

o

o

C/W

C/W

, DC COLLECTOR CURRENT (A)

CE

I

FIGURE 1. DC COLLECTOR CURRENT vs CASE

60

50

40

30

20

10

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

= 15V

V

GE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2001 Fairchild Semiconductor Corporation HGTG18N120BND Rev. B