Fairchild Semiconductor HGTG18N120BN Datasheet
G
C
E
HGTG18N120BN
December 2001Data Sheet
54A, 1200V, NPT Series N-Channel IGBT
The HGTG18N120BN is a N on- P unch T hrough (NPT) IGBT
design. This is a new member of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49288.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG18N120BN TO-247 G18N120BN
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 54A, 1200V, T
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
= 25
C
o
C
Packaging
JEDEC STYLE TO-247
= 150
J
o
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. B
±
±
8 µ
15 µ
µ
µ
±
HGTG18N120BN
Absolute Maximum Ratings
o
T
= 25
C, Unless Otherwise Specified
C
HGTG18N120BN UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At T
At T
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
o
= 110
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
= 150
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V
J
o
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
o
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/
C
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
GE
= 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
GE
C25
C110
CM
GES
GEM
D
AV
, T
J
STG
L
SC
SC
54 A
26 A
160 A
20 V
30 V
390 W
125 mJ
-55 to 150
260
o
C
o
C
o
C
s
s
NOTES:
1. Pulse width limited by maximum junction temperature.
2. I
= 25A, L = 400 µ H, T
CE
3. V
CE(PK)
= 960V, T
= 125
J
= 25
J
o
C, R
o
C.
= 3 Ω.
G
o
T
= 25
Electrical Specifications
C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
ECS
CES
CE(SAT)
GE(TH)
GES
Switching SOA SSOA T
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
GEP
G(ON)
d(ON)I
rI
d(OFF)I
fI
ON1
ON2
OFF
I
= 250 µ A, V
C
I
= 10mA, V
C
V
= 1200V T
CE
I
= 18A,
C
V
= 15V
GE
I
= 150 µ A, V
C
V
= ± 20V - -
GE
= 150
J
L = 200 µ H, V
I
= 18A, V
C
I
= 18A,
C
V
= 600V
CE
IGBT and Diode at T
I
=
18A
CE
V
= 960V
CE
V
= 15V
GE
R
= 3 Ω
G
L = 1mH
Test Circuit (Figure 18)
= 0V 1200 - - V
GE
= 0V 15 - - V
GE
o
= 25
C - - 250
C
T
T
T
T
= V
CE
GE
o
C, R
= 3 Ω, V
G
= 1200V
CE(PK)
= 600V - 10.5 - V
CE
V
V
= 25
J
o
= 125
C
C
C
C
C - 250 -
o
= 150
C--3mA
o
= 25
C - 2.45 2.7 V
o
= 150
C - 3.8 4.2 V
6.0 7.0 - V
= 15V,
GE
= 15V - 165 200 nC
GE
= 20V - 220 250 nC
GE
o
C
100 - - A
-2328ns
-1722ns
- 170 200 ns
- 90 140 ns
- 0.8 1.0 mJ
- 1.9 2.4 mJ
- 1.8 2.2 mJ
A
A
250 nA
©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. B
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
80
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
40
600 800400200 1000 1200
0
100
120
60
TJ = 150oC, RG = 3Ω, V
GE
= 15V, L = 200µH
VGE, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
12 13 14 15 16
5
10
15
20
25
50
100
150
200
300
t
SC
I
SC
30
250
VCE = 960V, RG = 3Ω, TJ = 125oC
HGTG18N120BN
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R
rI
fI
ON1
ON2
OFF
θJC
IGBT and Diode at T
I
= 18A
CE
V
= 960V
CE
V
= 15V
GE
R
= 3 Ω
G
L = 1mH
Test Circuit (Figure 18)
= 150
J
o
C
-2126ns
-1722ns
- 205 240 ns
- 140 200 ns
- 0.85 1.1 mJ
- 3.7 4.9 mJ
- 2.6 3.1 mJ
- - 0.32
NOTES:
4. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON1
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18.
Typical Performance Curves Unless Otherwise Specified
60
50
= 15V
V
GE
o
C/W
ON2
is
40
30
20
, DC COLLECTOR CURRENT (A)
10
CE
I
0
25 75 100 125 150
50
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
TJ = 150oC, RG = 3Ω, L = 1mH,
TC = 75oC, VGE = 15V, IDEAL DIODE
100
50
10
f
MAX1
f
MAX2
, OPERATING FREQUENCY (kHz)
PC = CONDUCTION DISSIPATION
MAX
f
R
1
5
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
= 0.05 / (t
= (PD - PC) / (E
(DUTY FACTOR = 50%)
= 0.32oC/W, SEE NOTES
ØJC
ICE, COLLECTOR TO EMITTER CURRENT (A)
d(OFF)I
10
ON2
+ t
d(ON)I
+ E
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. B
OFF
V
)
CE
)
110oC
110oC
= 960V
T
C
o
75
o
75
V
GE
15V
C
12V
C
15V
12V
30
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
4020
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
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