Fairchild Semiconductor HGTG12N60C3D Datasheet

SEMICONDUCTOR

January 1997

HGTG12N60C3D

24A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 24A, 600V at TC = 25oC

• Typical Fall Time . . . . . . . . . . . . . . 210ns at T

= 150oC

J

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Description

The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOS­FET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between 25
type TA49123. The diode used in antiparallel with the IGBT is
the development type TA49061.

The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.

PART NUMBER PACKAGE BRAND

HGTG12N60C3D TO-247 G12N60C3D

NOTE: When ordering, use the entire part number.

Formerly Developmental Type TA49117.

o

C and 150oC. The IGBT used is the development

PACKAGING AVAILABILITY

Package

JEDEC STYLE TO-247

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

G

E

C

G

C

E

Absolute Maximum Ratings T

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Collector Current Continuous

= 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

At T

C

Average Diode Forward Current at 110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . .T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
NOTE:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RGE = 25Ω.

CE(PK)

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC

C

= 25oC, Unless Otherwise Specified

C

CES

C25

J

, T

C110

(AVG)

CM

GES

GEM

D

STG

L
SC
SC

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 24A at 600V

J

= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . t

GE

= 10V . . . . . . . . . . . . . . . . . . . . . . . . . . t

GE

HGTG12N60C3D UNITS

600 V

24 A
12 A
15 A
96 A

±20 V
±30 V

104 W

-40 to 150
260

4 µs

13 µs

o

C

o

C

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

3-35

File Number 4043.1

HGTG12N60C3D

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS

Collector-Emitter Breakdown Voltage BV

Emitter-Collector Breakdown Voltage BV

Collector-Emitter Leakage Current I

CES

ECS

CES

IC = 250µA, VGE = 0V 600 - - V

IC = 10mA, VGE = 0V 15 25 - V

VCE = BV

VCE = BV

Collector-Emitter Saturation Voltage V

CE(SAT)IC

= I

C110

VGE = 15V

IC = 15A,
VGE = 15V

Gate-Emitter Threshold Voltage V

GE(TH)

IC = 250µA,
VCE = V

Gate-Emitter Leakage Current I

GES

VGE = ±20V - - ±100 nA

Switching SOA SSOA TJ = 150oC,

VGE= 15V,
RG = 25Ω,
L = 100µH

GE

CES

CES

,

LIMITS

UNITSMIN TYP MAX

TC = 25oC - - 250 µA

TC = 150oC - - 2.0 mA

TC = 25oC - 1.65 2.0 V

TC = 150oC - 1.85 2.2 V

TC = 25oC - 1.80 2.2 V

TC = 150oC - 2.0 2.4 V

TC = 25oC 3.0 5.0 6.0 V

V

= 480V 80 - - A

CE(PK)

V

= 600V 24 - - A

CE(PK)

Gate-Emitter Plateau Voltage V

On-State Gate Charge Q

GEP

G(ON)

IC = I

IC = I

, VCE = 0.5 BV

C110

,

C110

VCE = 0.5 BV

CES

- 7.6 - V

VGE = 15V - 48 55 nC

CES

VGE = 20V - 62 71 nC

Current Turn-On Delay Time t

Current Rise Time t

D(ON)I

RI

TJ = 150oC,
ICE = I

C110,

V

= 0.8 BV

CE(PK)

CES,

-14-ns

-16-ns

VGE = 15V,

Current Turn-Off Delay Time t

D(OFF)I

RG= 25Ω,

- 270 400 ns

L = 100µH

Current Fall Time t

Turn-On Energy E

Turn-Off Energy (Note 3) E

Diode Forward Voltage V

Diode Reverse Recovery Time t

FI

ON

OFF

EC

rr

IEC = 12A - 1.7 2.0 V

IEC= 12A, dIEC/dt = 100A/µs - 34 42 ns

- 210 275 ns

- 380 - µJ

- 900 - µJ

IEC = 1.0A, dIEC/dt = 100A/µs - 30 37 ns

Thermal Resistance R

θJC

IGBT - - 1.2

Diode - - 1.5

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and

OFF

ending at the point where the collector current equals zero (ICE = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn­On losses include diode losses.

o

C/W

o

C/W

3-36

Typical Performance Curves

80

DUTY CYCLE <0.5%, V

70

PULSE DURATION = 250µs

60

50

TC = 150oC

40

TC = 25oC

30

TC = -40oC

20

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

4

6 8 10 12

VGE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

CE

= 10V

HGTG12N60C3D

80
70

60

50

40

30

20

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

14

0

0246810

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC

VGE= 15.0V

12.0V

10.0V

9.0V

8.5V

8.0V

7.5V

7.0V

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

80

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V

70

80

PULSE DURATION = 250µs

DUTY CYCLE <0.5%, VGE = 15V

70

TC = -40oC

60

60

TC = 25oC

50

40

TC = -40oC

30

TC = 150oC

20

50

40

TC = 150oC

30

20

TC = 25oC

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

012345

, COLLECTOR-TO-EMITTER VOLTAGE (V)

V

CE

10

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

012345

, COLLECTOR-TO-EMITTER VOLTAGE (V)

V

CE

FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE

25

V

= 15V

GE

20

15

10

20

VCE = 360V, RGE= 25Ω, TJ= 125oC

15

10

I

SC

140

120

100

80

60

5

, DC COLLECTOR CURRENT (A)

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A

FUNCTION OF CASE TEMPERA TURE

3-37

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

5

t

10 11 12

VGE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

t

SC

14 1513

40

, PEAK SHORT CIRCUIT CURRENT(A)

SC

I

20