Fairchild Semiconductor HGT1S7N60C3DS Datasheet
SEMICONDUCTOR
January 1997
HGTP7N60C3D , HGT1S7N60C3D ,
HGT1S7N60C3DS
14A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T
= 150oC
J
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Description
The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
o
25
C and 150oC. The IGBT used is developmental type
TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, rela ys and contactors
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP7N60C3D TO-220AB G7N60C3D
HGT1S7N60C3D TO-262AA G7N60C3D
HGT1S7N60C3DS TO-263AB G7N60C3D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A.
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
JEDEC TO-262AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
G
EMITTER
COLLECTOR
GATE
EMITTER
COLLECTOR
GATE
A
A
M
A
COLLECTOR
(FLANGE)
C
Formerly Developmental Type TA49121.
E
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
At TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At TC = 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . SSOA 40A at 480V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.487 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . .t
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .t
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
= 360V, TJ = 125oC, RGE = 50Ω.
CE(PK)
© Harris Corporation 1997
= 25oC, Unless Otherwise Specified
C
3-22
HGTP7N60C3D, HGT1S7N60C3D
HGT1S7N60C3DS UNITS
CES
C25
C110
(AVG)
CM
GES
GEM
D
STG
L
SC
SC
600 V
±20 V
±30 V
-40 to 150
260
14 A
7A
8A
56 A
60 W
1 µs
8 µs
File Number 4150.1
o
C
o
C
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Current I
CES
CES
IC = 250µA, VGE = 0V 600 - - V
VCE = BV
VCE = BV
Collector-Emitter Saturation Voltage V
CE(SAT)
IC = I
C110
VGE = 15V
Gate-Emitter Threshold Voltage V
GE(TH)
IC = 250µA,
VCE = V
Gate-Emitter Leakage Current I
GES
VGE = ±25V - - ±250 nA
Switching SOA SSOA TJ = 150oC
RG = 50Ω
VGE = 15V
L = 1mH
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
IC = I
IC = I
C110
C110
VCE = 0.5 BV
Current Turn-On Delay Time t
D(ON)I
TJ = 150oC
ICE = I
Current Rise Time t
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t
RI
FI
ON
OFF
EC
rr
V
CE(PK)
VGE = 15V
RG= 50Ω
L = 1mH
IEC = 7A - 1.9 2.5 V
IEC = 7A, dIEC/dt = 200A/µs - 25 35 ns
IEC = 1A, dIEC/dt = 200A/µs - 18 30 ns
Thermal Resistance R
θJC
IGBT - - 2.1
Diode - - 2.0
CES
CES
,
GE
, VCE = 0.5 BV
,
CES
C110
= 0.8 BV
TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.6 2.0 V
TC = 150oC - 1.9 2.4 V
TC = 25oC 3.0 5.0 6.0 V
V
V
= 480V 40 - - A
CE(PK)
= 600V 6 - - A
CE(PK)
CES
-8-V
VGE = 15V - 23 30 nC
VGE = 20V - 30 38 nC
- 8.5 - ns
CES
- 11.5 - ns
- 350 400 ns
- 140 275 ns
- 165 - µJ
- 600 - µJ
o
o
C/W
C/W
NOTE:
3. T urn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D, HGT1S7N60C3D, and HGT1S7N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of P ower De vice Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
3-23
HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS
Typical Performance Curves
40
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
35
30
25
T
= 150oC
C
20
TC = 25oC
15
T
= -40oC
C
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
46 81012
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
CE
= 10V
40
PULSE DURATION = 250µs,
DUTY CYCLE <0.5%,
35
TC = 25oC
30
25
VGE = 15.0V
20
15
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
14
0
0246810
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
12.0V
10.0V
9.0V
8.5V
8.0V
7.5V
7.0V
40
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
35
30
25
20
15
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
012345
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
TC = -40oC
TC = 150oC
TC = 25oC
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
15
12
9
= 15V
V
GE
40
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
35
30
25
20
15
10
5
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
012 34 5
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
TC = -40oC
TC = 25oC
TC = 150oC
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
12
VCE = 360V, RGE = 50Ω, TJ = 125oC
10
8
I
140
120
SC
100
6
, DC COLLECTOR CURRENT (A)
3
CE
I
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
3-24
6
4
, SHORT CIRCUIT WITHSTAND TIME (µS)
SC
t
2
10
11 12
, GATE-TO-EMITTER VOLTAGE (V)
V
GE
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
80
60
t
SC
14
, PEAK SHORT CIRCUIT CURRENT (A)
SC
I
40
1513