Fairchild Semiconductor HGT1S7N60B3DS Datasheet

HGTP7N60B3D, HGT1S7N60B3DS

Data Sheet December 2001

14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode

The HGTP7N60B3D and HGT1S7N6 0B3DS are M OS gated
high voltage switching devices combining the best features
of MOSFETs and bipol ar transis tors. Thes e devic es hav e the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transist or. The much lower
on-state voltage drop varies only moderately between 25
and 150

o

C at rated current. The IGBT is developmental type

o

C

TA49190. The diode used in anti-p arallel with th e IGBT is th e
RHRD660 (TA49057).

The IGBT is ideal for many high voltage sw itc hi ng
applications operating at moderate frequencies where low
conduction losses are essential, such as : AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly Developmental Type TA49191.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTP7N60B3D TO-220AB ALT G7N60B3D
HGT1S7N60B3DS TO-263AB G7N60B3D

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.

Features

• 14A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR

(FLANGE)

E

C

G

JEDEC TO-263AB

G

E

COLLECTOR
(FLANGE)

= 150oC

J

Symbol

C

G

E

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,41 7,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,60 5,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,68 4,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,80 9,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,89 0,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2001 Fairchild Semiconductor Corpo ration HGTP7N60B3D, HGT1S7N60B3DS Rev. B

HGTP7N60B3D, HGT1S7N60B3DS

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

ALL TYPES UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Average Rectified Forward Current at T

= 152oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Pow er Dissi pation Total at T

C

Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 35A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Not e 2) at V
Short Circuit Withstand Time (Not e 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

J

, T

C25

C110

F(AV)

CM

GES

GEM

D

STG

L
SC
SC

14 A

7A
6A

56 A

±20 V
±30 V

60 W

-55 to 150
260

o

C

o

C

2 µs

12 µs

NOTES:

1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than I

2. V

Electrical Specifications

= 360V, TJ = 125oC, RG = 50Ω.

CE(PK)

TC = 25oC, Unless Otherwise Specified

CM

.

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES

CES

CE(SAT)IC

GE(TH)IC

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E

GEP

G(ON)IC

d(ON)I

rI

d(OFF)I

fI

ON

OFF

IC = 250µA, VGE = 0V 600 - - V
VCE = BV

CES

= I

, VGE = 15V TC = 25oC-1.82.1V

C110

= 250µA, VCE = V

TC = 25oC - - 100 µA

= 150oC- -3.0mA

T

C

= 150oC-2.12.4V

T

C

GE

3.0 5.1 6.0 V

VGE = ±20V - - ±100 nA

= 150oC, RG = 50Ω,

J

= 15V, L = 100µH

V

GE

IC = I

V

CE

C110

= I

C110

= 0. 5BV

, VCE = 0.5 BV
,

CES

IGBT and Diode Both at TJ = 25oC,

= I

I

CE

VGE = 15V, RG = 50Ω, L = 2mH,

, VCE = 0.8 BV

C110

Test Circuit (Figure 19)

V

= 480V 42 - - A

CE

= 600V 35 - - A

V

CE

CES

-7.7- V

VGE = 15V - 23 28 nC

= 20V - 30 37 nC

V

GE

-26-ns

CES,

-21-ns

- 130 160 ns

-6080ns

- 160 200 µJ

- 120 200 µJ

©2001 Fairchild Semiconductor Corpo ration HGTP7N60B3D, HGT1S7N60B3DS Rev. B

I

, DC COLLECTOR CURRENT (A)

0

I

, COLLECTOR TO EM ITTER CURRENT (A)

0

HGTP7N60B3D, HGT1S7N60B3DS

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

Thermal Resistance Junction To Case R

rI

fI

ON

OFF

EC

rr

θJC

IGBT and Diode Both at TJ = 150oC

= I

I

CE

V

GE

, VCE = 0.8 BV

C110

= 15V, RG = 50Ω, L = 2mH,

CES

,

Test Circuit (Figure 19)

I

= 7A - 1.85 2.2 V

EC

IEC = 7A, dIEC/dt = 200A/µs--37ns

= 1A, dIEC/dt = 200A/µs--32ns

I

EC

IGBT - - 2.1

-24-ns

-22-ns

- 230 295 ns

- 120 175 ns

- 310 350 µJ

- 350 500 µJ

Diode - - 3.0

NOTE:

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement

CE

to diode recovery.

Typical Performance Curves

Unless Otherwise Specified

o

C/W

o

C/W

16

14

12

10

8

6

4

2

CE

0

25 50 75 100 125 15

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

CE

50

40

30

20

10

0

200 3001000 400 500

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V

V

GE

TJ = 150oC, RG = 50Ω, V

GE

600

= 15V

70

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

©2001 Fairchild Semiconductor Corpo ration HGTP7N60B3D, HGT1S7N60B3DS Rev. B