Fairchild Semiconductor HGTP3N60C3D, HGT1S3N60C3DS Datasheet

SEMICONDUCTOR

January 1997

HGTP3N60C3D , HGT1S3N60C3D ,

HGT1S3N60C3DS

6A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diodes

Features

• 6A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 130ns at T

= 150oC

J

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between

o

25

C and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.

The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

HGTP3N60C3D TO-220AB G3N60C3D
HGT1S3N60C3D TO-262AA G3N60C3D
HGT1S3N60C3DS TO-263AB G3N60C3D

NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.

Formerly Developmental Type TA49119.

Packaging

JEDEC TO-220AB

COLLECTOR (FLANGE)

JEDEC TO-262AA

COLLECTOR

(FLANGE)

JEDEC TO-263AB

GATE
EMITTER

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

G

EMITTER

COLLECTOR

GATE

EMITTER

COLLECTOR

GATE

A

A

M

A

COLLECTOR

(FLANGE)

C

E

Absolute Maximum Ratings T

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Collector Current Continuous

At TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At TC = 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Collector Current Pulsed (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at TJ = 150oC, Fig. 14. . . . . . . . . . . . . . . . . . . . . . SSOA 18A at 480V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .t

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

= 360V, TJ = 125oC, RGE = 82Ω.

CE(PK)

© Harris Corporation 1997

= 25oC, Unless Otherwise Specified

C

3-9

HGTP3N60C3D, HGT1S3N60C3D

HGT1S3N60C3DS UNITS

CES

C25

C110

CM

GES

GEM

D

STG

L

SC

600 V

6A
3A

24 A

±20 V
±30 V

33 W

-40 to 150
260

8 µs

File Number 4140.1

o

C

o

C

HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector-Emitter Breakdown Voltage BV
Collector-Emitter Leakage Current I

CES

CES

IC = 250µA, VGE = 0V 600 - - V
VCE = BV
VCE = BV

Collector-Emitter Saturation Voltage V

CE(SAT)

IC = I

C110

VGE = 15V

Gate-Emitter Threshold Voltage V

GE(TH)

IC = 250µA,
VCE = V

Gate-Emitter Leakage Current I

GES

VGE = ±25V - - ±250 nA

Switching SOA SSOA TJ = 150oC

RG = 82Ω
VGE = 15V

L = 1mH
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q

GEP

G(ON)

IC = I

C110

IC = IC110,

VCE = 0.5 BVCES

Current Turn-On Delay Time t

D(ON)I

TJ = 150oC

ICE = I
Current Rise Time t

Current Turn-Off Delay Time t

D(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Diode Forward Voltage V
Diode Reverse Recovery Time t

RI

FI

ON

OFF

EC

RR

V

CE(PK)

VGE = 15V

RG= 82Ω

L = 1mH

IEC = 3A - 2.0 2.5 V

IEC = 3A, dIEC/dt = 200A/µs - 22 28 ns

IEC = 1A, dIEC/dt = 200A/µs - 17 22 ns
Thermal Resistance R

θJC

IGBT - - 3.75

Diode - - 3.0

CES

CES

,

GE

, VCE = 0.5 BV

C110

= 0.8 BV

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
TC = 25oC 3.0 5.5 6.0 V

V
V

= 480V 18 - - A

CE(PK)

= 600V 2 - - A

CE(PK)

CES

- 8.3 - V
VGE = 15V - 10.8 13.5 nC
VGE = 20V - 13.8 17.3 nC

-5-ns

CES

-10- ns

- 325 400 ns

- 130 275 ns

-85-µJ

- 245 - µJ

o

o

C/W
C/W

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of P ower De vice Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951

3-10

HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS

Typical Performance Curves

20

DUTY CYCLE <0.5%, V

18

PULSE DURATION = 250µs

16
14
12
10

TC = 150oC

8

=25oC

T

C

6

TC = -40oC

4

, COLLECTOR-EMITTER CURRENT (A)

2

CE

I

0

4

6 8 10 12

VGE, GATE-TO-EMITTER VOLTAGE (V)

CE

= 10V

14

20

PULSE DURATION = 250µs
DUTY CYCLE <0.5%

18

TC = 25oC

16
14
12
10

8
6
4

, COLLECTOR-EMITTER CURRENT (A)

2

CE

I

0

VGE = 15V

0246810

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

20

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

18
16

14
12
10

8
6
4
2

, COLLECTOR-EMITTER CURRENT (A)

CE

I

0

012345

, COLLECTOR-TO-EMITTER VOLTAGE (V)

V

CE

= 10V

GE

TC = -40oC

TC = 150oC

TC =25oC

20

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V

18
16
14
12
10

T

8
6
4

, COLLECTOR-EMITTER CURRENT (A)

2

CE

I

0

012345

= -40

C

V

, COLLECTOR-TO-EMITTER VOLTAGE (V)

CE

o

T

= 25

C

C

o

C

12V

T

= 150

C

9.0V

8.5V

8.0V

7.5V

7.0V

o

10V

C

FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE

7

V

= 15V

GE

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A

FUNCTION OF CASE TEMPERA TURE

FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE

14

VCE = 360V, RGE = 82Ω, TJ = 125oC

12

10

t

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µS)

SC

0

t

10 11 12

SC

V

, GATE-TO-EMITTER VOLTAGE (V)

GE

I

SC

FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

3-11

70

60

50

40

30

20

10

, PEAK SHORT CIRCUIT CURRENT(A)

SC

I

14 1513

0