Fairchild Semiconductor HGT1S20N60C3S Datasheet

HGTG20N60C3, HGTP20N60C3,

Data Sheet December 2001

HGT1S20N60C3S

45A, 600V, UFS Series N-Channel IGBT

This family of MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar
transistors . These devices ha ve the high i npu t impe dance of
a MOSFET and the low on-s tate con duction lo ss of a bi polar
transistor. The much lower on-state voltage drop varies only
moderately bet w e en 25

o

C and 150oC.

The IGBT is ideal for many high voltage switc hi ng
applications operating at moderate freq ue ncies where low
conduction losses are ess ential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49178.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG20N60C3 TO-247 G20N60C3
HGTP20N60C3 TO-220AB G20N60C3
HGT1S20N60C3S TO-263AB G20N60C3

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N60C3S9A.

Features

• 45A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T

• Short Circuit Rating

• Low Conduction Loss

• Related Literature

- TB334 “Guidelines f or Solde ring Surface Mount
Components to PC Boards”

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(FLANGE)

= 150oC

J

Symbol

C

G

E

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

JEDEC TO-220AB (ALTERNATE VERSION)

E

C

G

COLLECTOR

(FLANGE)

JEDEC TO-263AB

G

E

COLLECTOR

(FLANGE)

©2001 Fairchild Semiconductor Corpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C 3S

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

ALL TYPES UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Pow er Dissi pation Total at T

C

Power Dissipation Derating T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC

C

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

C25

C110

CM

GES

GEM

D

ARV

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Short Circuit Withstand Time (Not e 2) at V
Short Circuit Withstand Time (Not e 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

L

pkg

SC
SC

45 A
20 A

300 A

±20 V
±30 V

164 W

100 mJ

-55 to 150

300
260

4 µs

10 µs

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

= 360V, TJ = 125oC, RG = 10Ω.

CE(PK)

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

GEP

G(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = 10mA, VGE = 0V 15 28 - V
VCE = BV

V

= I

GE

C110

= 15V

CES

IC = 250µA, VCE = V

TC = 25oC - - 250 µA

= 150oC--5.0mA

T

C

T

= 25oC-1.41.8V

C

T

= 150oC-1.51.9V

C

GE

3.4 4.8 6.3 V

VGE = ±20V - - ±250 nA

= 150oC, RG =

J

10Ω, V
L = 100µH

ICE = I
ICE = I

= 15V,

GE

, VCE = 0.5 BV

C110
C110

VCE = 0.5 BV
IGBT and Diode at TJ = 25oC

= I

I

CE

C110

VCE = 0.8 BV
VGE = 15V
R

= 10Ω

G

L = 1mH
Test Circuit (Figure 17)

V

= 480V 120 - - A

CE

= 600V 20 - - A

V

CE

CES

-8.4- V

VGE = 15V - 91 110 nC

CES

= 20V - 122 145 nC

V

GE

-2832ns

-2428ns

CES

- 151 210 ns

-5598ns

- 295 320 µJ

- 500 550 µJ

- 500 700 µJ

©2001 Fairchild Semiconductor Corpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C 3S

Electrical Specifications

TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC
I

= I

CE

C110

VCE = 0.8 BV
VGE = 15V
R

= 10Ω

G

CES

L = 1mH
Test Circuit (Figure 17)

NOTES:

3. T urn-Off Energy Loss (E
at the point where the collector current equals zero (I

) is defined as the integral of the instantaneous po wer loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

of Pow er De vice Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

4. Values for two T urn-On loss conditions are shown for the convenience of the circuit des igner. E
turn-on loss when a typical diode i s u s ed i n the t est circu it and the diode is at the same T

Typical Performance Curves

50

40

30

Unless Otherwise Specified

= 15V

V

GE

140

TJ = 150oC, RG = 10Ω, V

120

100

80

J

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in Figure 17.

-2832ns

-2428ns

- 280 450 ns

- 108 210 ns

- 380 410 µJ

-1.01.1mJ

-1.21.7mJ

ON2

o

C/W

is the

- - 0.76

= 15V, L = 100µH

GE

20

10

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

TJ = 150oC, RG = 10Ω,

, OPERATING FREQUENCY (kHz)

MAX

f

100

10

T

V

C

GE

o

75

C

15V

o

C

75

10V

o

110

C

15V

110oC

10V

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)

R

= 0.76oC/W, SEE NOTES

ØJC

1

2

I

CE

d(OFF)I

5

, COLLECTOR TO EMITTER CURRENT (A)

+ t

ON2

d(ON)I

+ E

OFF

L = 1mH, V

)

)

CE

= 480V

60

40

20

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

300 400200100 500 600

700

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

14

VCE = 360V, RG = 10Ω, TJ = 125oC

12

10

8

6

4

, SHORT CIRCUIT WITHSTAND TIME (µs)

2

SC

4010 20

t

10 11 12 13 14 15

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

450

400

350

300

250

200

t

SC

150

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

FIGURE 3. OPERATING FREQUENCY vs COLLECT OR TO

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

EMITTER CURRENT

©2001 Fairchild Semiconductor Corpo ration HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Rev. B