Fairchild Semiconductor HGTP20N35G3VL, HGT1S20N35G3VLS Datasheet
December 2001
HGTP20N35G3VL,
HGT1S20N35G3VL,
HGT1S20N35G3VLS
20A, 350V N-Channel,
Logic Level, Voltage Clamping IGBTs
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
•T
= 175oC
J
• Igniti on Energy Capable
Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in a utomotive ignition circuits. Unique features include an active
voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in
ignition c ircuits. Internal diodes provide ESD pr otection for
the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
HGTP20N35G3VL T0-220AB 20N35GVL
HGT1S20N35G3VL T0-262AA 20N35GVL
HGT1S20N35G3VLS T0-263AB 20N35GVL
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
HGT1S20N35G3VLS9A.
The development type number for this device is TA49076.
Packages
JEDEC TO-220AB
COLLECTOR
(FLANGE)
JEDEC TO-262AA
COLLECTOR
(FLANGE)
JEDEC TO-263AB
GATE
EMITTER
T e rminal Dia gra m
N-CHANNEL ENHANCEMENT MODE
GATE
R
1
EMITTER
EMITTER
COLLECTOR
GATE
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
R
2
EMITTER
Absolute Maximum Ratings
Collector-Emitter Bkdn Voltage At 10mA, R
Emitter-Collector Bkdn Voltage At 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous At V
Gate-Emitter-Voltage (Note). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Inductive Switching Current At L = 2.3mH, T
At L = 2.3mH, T
Collector to Emitter Avalanche Energy At L = 2.3mH, T
Power Dissipation Total At T
Power Dissipation Derating T
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 6 KV
NOTE: May be exceeded if I
©2001 Fairchild Semiconductor Corpo ration HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
At V
= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
C
GEM
TC = +25oC, Unless Otherwise Specified
HGTP20N35G3VL
HGT1S20N35G3VL
= 1kΩ. . . . . . . . . . . . . . . . . . . . . . . BV
GE
= 5.0V, TC = +25oC, Figure 7 . . . . . . . . . . . . . I
GE
= 5.0V, TC = +100oC . . . . . . . . . . . . . . . . . . . . I
GE
= +25o C . . . . . . . . . . . . . . . . . . . . . .I
C
= +175oC . . . . . . . . . . . . . . . . . . . . . . I
C
> +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
is limited to 10mA.
= +25oC . . . . . . . . . . . . . . E
C
CER
ECS
C25
C100
GES
SCIS
SCIS
AS
, T
J
STG
HGT1S20N35G3VLS UNITS
D
L
375 V
24 V
20 A
20 A
±10 V
26 A
18 A
775 mJ
150 W
-40 to +175
260
o
C
o
C
Specifications HGTP20N35G3VL, HGT1S20N35G3 VL, HGT1S20N35 G3 VLS
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
PARAMETERS SYMBOL TEST CONDITIONS
Collector-Emitter Breakdown Voltage BV
Collector-Emitter Breakdown Voltage
Gate-Emitter Plateau Voltage V
Gate Charge Q
Collector-Emitter Clamp Bkdn. Voltage BV
Emitter-Collector Breakdown Voltage BV
CES
BV
CER
GEP
G(ON)
CE(CL)IC
ECS
LIMITS
UNITSMIN TYP MAX
IC = 10mA,
V
= 0V
GE
IC = 10mA
V
= 0V
GE
= 1kΩ
R
GE
IC = 10A
V
= 12V
CE
IC = 10A
V
= 5V
GE
= 12V
V
CE
= 10A
= 0Ω
R
G
= +175oC 310 345 380 V
T
C
T
= +25oC 320 350 380 V
C
= -40oC 320 355 390 V
T
C
T
= +175oC 300 340 375 V
C
= +25oC 315 345 375 V
T
C
T
= -40oC 315 350 390 V
C
= +25oC-3.7-V
T
C
= +25oC - 28.7 - nC
T
C
T
= +175oC 325 360 395 V
C
IC = 10mA TC = +25oC2032-V
Collector-Emitter Leakage Current I
Collector-Emitter Saturation Voltage V
Gate-Emitter Threshold Voltage V
CE(SAT)IC
GE(TH)IC
Gate Series Resistance R
Gate-Emitter Resistance R
Gate-Emitter Leakage Current I
Gate-Emitter Breakdown Voltage BV
Current Turn-Off Time-Inductive Load t
D(OFF)I
t
F(OFF)I
Inductive Use Test I
CES
GES
GES
SCIS
VCE = 250V TC = +25oC--5µA
V
= 250V TC = +175oC - - 250 µA
CE
= 10A
= 4.5V
V
GE
I
= 20A
C
= 5.0V
V
GE
= 1mA
V
= V
CE
GE
1
2
T
= +25oC-1.31.6V
C
T
= +175oC - 1.25 1.5 V
C
T
= +25oC-1.62.8V
C
T
= +175oC-1.93.5V
C
TC = +25oC 1.3 1.8 2.3 V
TC = +25oC-1.0-kΩ
TC = +25oC 101725kΩ
VGE = ±10V ±400 ±590 ±1000 µA
I
= ±2mA ±12 ±14 - V
GES
+
IC = 10A, RG = 25Ω,
L = 550µH, R
= 300V, TC = +175oC
V
CL
= 26.4Ω, VGE = 5V,
L
L = 2.3mH,
= 5V,
V
G
= 0Ω
R
G
T
= +175oC18--A
C
= +25oC26--A
T
C
-1530µs
Thermal Resistance R
©2001 Fairchild Semiconductor Corpo ration HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
θJC
--1.0oC/W
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V
50
40
30
T
= +175oC
C
TC = +25oC
20
T
= -40oC
C
10
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
1
2
3
45
VGE, GATE-TO-EMITTER VOLTAGE (V)
6
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
100
VGE=10V
7V
6.5V
80
60
40
20
, COLLECTOR-EMITTER CURRENT (A)
CE
I
0
0
24 6810
V
, COLLECTOR-TO-EMITTER VOLTAGE (V)
CE
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
50
40
30
VGE = 4.5V
-40oC
40
30
TC = +175oC
VGE = 5.0V
VGE = 4.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
= +25oC
C
+25oC
+175oC
20
VGE = 4.0V
10
, COLLECTOR EMITTER CURRENT (A)
CE
I
0
01 2 34
V
, SATURATION VOLTAGE (V)
CE(SAT)
FIGURE 3. COLLECTOR-EMITTER CU RRENT AS A FUNCTION
OF SATURATION VOLTAGE
20
10
, COLLECTOR EMITTER CURRENT (A)
CE
I
0
0
1
V
CE(SAT)
2
, SATURATION VOLTAGE (V)
3
4
5
FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION
OF SATURATION VOLTAGE
©2001 Fairchild Semiconductor Corpo ration HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
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