Discrete Power & Signal
Technologies
July 1998
FZT790A
C
E
C
B
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A = 25°C unless otherwise noted
FZT790A
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
A = 25°C unless otherwise noted
Max
Characteristic
FZT790A
Units
V40Collector-Emitter Voltage
V50Collector-Base Voltage
V5Emitter-Base Voltage
A3Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
W2Total Device Dissipation
°C/W62.5Thermal Resistance, Junction to Ambient
1998 Fairchild Semiconductor Corporation
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SMALL SIGNAL CHARACTERISTICS
PNP Low Saturation Transistor
(continued)
Electrical Characteristics T
BV
BV
BV
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
*
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
A = 25°C unless otherwise noted
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB = 30 V
VCB = 30 V, TA=100°C
VEB = 4V
IC = 10 mA, VCE = 2 V
IC = 500 mA, VCE = 2 V
IC = 1 A, VCE = 2 V
IC = 2 A, VCE = 2 V
IC = 500 mA, IB = 5 mA
IC = 1 A, IB = 10 mA
IC = 2 A, IB = 50 mA
IC = 1 A, IB = 10 mA
250
200
150
100
10
100
450
750
UnitsMaxMinTest ConditionsParameterSymbol
V40
V50
V5
nA
uA
nA
-800300
mV250
V1
f
T
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Transition Frequency
IC = 50 mA,VCE = 5 V, f=50MHz
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