Fairchild Semiconductor FZT790A Datasheet

FZT790A
Discrete Power & Signal
Technologies
July 1998
FZT790A
C
E
C
B
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
FZT790A
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
Max
Characteristic
FZT790A
Units
V40Collector-Emitter Voltage V50Collector-Base Voltage
V5Emitter-Base Voltage A3Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Units
W2Total Device Dissipation
°C/W62.5Thermal Resistance, Junction to Ambient
1998 Fairchild Semiconductor Corporation
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SMALL SIGNAL CHARACTERISTICS
ON
CHARACTERISTICS
OFF CHARACTERISTICS
PNP Low Saturation Transistor
FZT790A
(continued)
Electrical Characteristics T
BV BV BV I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current
Emitter Cutoff Current
*
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30 V
VCB = 30 V, TA=100°C VEB = 4V
IC = 10 mA, VCE = 2 V IC = 500 mA, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V
IC = 500 mA, IB = 5 mA IC = 1 A, IB = 10 mA IC = 2 A, IB = 50 mA
IC = 1 A, IB = 10 mA
250 200 150
100
10
100
450 750
UnitsMaxMinTest ConditionsParameterSymbol
V40 V50 V5
nA uA
nA
-800300
mV250
V1
f
T
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
Transition Frequency
IC = 50 mA,VCE = 5 V, f=50MHz
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