Fairchild Semiconductor FZT749 Datasheet

FZT749
Discrete Power & Signal
Technologies
July 1998
FZT749
C
E
C
B
SOT-223
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A = 25°C unless otherwise noted
FZT749
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
Symbol
P
D
R
θJA
A = 25°C unless otherwise noted
Max
Characteristic
FZT749
Units
V25Collector-Emitter Voltage V35Collector-Base Voltage
V5Emitter-Base Voltage A3Collector Current - Continuous
Units
W2Total Device Dissipation
°C/W62.5Thermal Resistance, Junction to Ambient
1998 Fairchild Semiconductor Corporation
Page 1 of 2
fzt749.lwpPrPC 7/10/98 revB
ON
CHARACTERISTICS
*
PNP Low Saturation Transistor
FZT749FZT749FZT749
(continued)
Electrical Characteristics T
OFF CHARACTERISTICS
BV BV BV I
CBO
I
EBO
h
FE
V
CE(sat)
CEO
CBO
EBO
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
A = 25°C unless otherwise noted
IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30 V
VCB = 30 V, TA=100°C VEB = 4V
IC = 50 mA, VCE = 2 V IC = 1 A, VCE = 2 V IC = 2 A, VCE = 2 V IC = 6 A, VCE = 2 V
IC = 1 A, IB = 100 mA IC = 3 A, IB = 300 mA
70
100
75 15
100
10
100
300
600
UnitsMaxMinTest ConditionsParameterSymbol
V25 V35 V5
nA uA
nA
-
mV300
V
BE(sat)
V
BE(on)
Base-Emitter Saturation Voltage Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
C
obo
f
T
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
Output Capacitance Transition Frequency
IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V
VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz
V1.25 V1
pF100
- 100
Page 2 of 2
fzt749.lwpPrPC 7/10/98 revB
Loading...