Fairchild Semiconductor FJC1308 Datasheet
FJC1308
Audio Power Amplifier Applications
• Complement to FJC1963
• High Collector Current
• Low Collector-Emitter Saturation Voltage
FJC1308
1
1. Base 2. Collector 3. Emitter
SOT-89
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -30 V
Collector-Emitter Voltage -30 V
Emitter-Base Voltage -6 V
Collector Current (DC) -3 A
Power Dissipation(TC=25°C) 0.5 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=-1.5, IB=-0.15A -0.45 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=-1.5, IB=-0.15A -1.5 V
V
BE
Collector-Base Breakdown Voltage IC=-50µA, IE=0 -30 V
Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 -30 V
Emitter-Base Breakdown Voltage IE=-50µA, IC=0 -6 V
Collector Cut-off Current VCE=-20V, VB=0 -0.5 µA
Emitter Cut-off Current VEB=-5V, IC=0 -0.5 µA
DC Current Gain VCE=-2V, IC=-0.5A 80 390
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
hFE Classification
Classification P Q R
h
FE
80 ~ 180 120 ~ 270 180 ~ 390
Marking
FBP
hFE grade
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
Typical Characteristics
FJC1308
-1400
-1200
-1000
-800
-600
-400
[mA], COLLECTOR CURRENT
C
I
-200
0
0-2-4-6-8-10-12-14-16
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-100m
-10m
(sat) [V], SATURATION VOLTAGE
CE
V
-1m
-1m -10m -100m -1 -10
IC [A], COLLECTOR CURRENT
Ta = 125oC
Ta = 25oC
Ta = - 40oC
IB = -7mA
IB = -6mA
IB = -5mA
IB = -4mA
IB = -3mA
IB = -2mA
IB = -1mA
IC = 10 I
1000
VCE = - 2V
Ta = 125oC
Ta = 25oC
100
, DC CURRENT GAIN
FE
h
10
Ta = - 40oC
-10m -100m -1 -10
IC [A], COLLECTOR CURRENT
Ta = 25oC
IC = 10 I
B
-10
B
-1
(sat) [V], SATURATION VOLTAGE
BE
V
Ta = - 40oC
Ta = 125oC
-0.1
-1m -10m -100m -1 -10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
125oC
25oC
- 40oC
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
[A], COLLECTOR CURRENT
C
I
-0.2
-0.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE [V], BASE-EMITTER VOLTAGE
VCE = - 2V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
[W], COLLECTOR PO WER DISSIPA T ION
C
P
0.0
0 25 50 75 100 125 150 175
Ta [oC], AMIBIENT TEMPERATURE
Figure 5. Base-Emitter On Voltage Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
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