Fairchild Semiconductor FJAF6916 Datasheet
FJAF6916
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BV
• Low Saturation Voltage : V
(sat) = 3V (Max.)
CE
• For Color Monitor
CBO
= 1700V
FJAF6916
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Rating Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 30 A
I
CP
P
C
T
J
T
STG
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Collector-Base Voltage 1700 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current (DC) 16 A
Collector Dissipation 60 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
I
CES
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=10A, IB=2.5A 3 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=10A, IB=2.5A 1.5 V
V
BE
* Storage Time VCC=200V, IC=8A, RL=25
t
STG
*Fall Time 0.3 µs
t
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Collector Cut-off Current VCB=1400V, RBE=0 1 mA
Collector Cut-off Current VCB=800V, IE=0 10 µA
Emitter Cut-off Current VEB=4V, IC=0 1 mA
Collector-Base Breakdown Voltage IC=500µA, IE=0 1700 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V
DC Current Gain VCE=5V, IC=1A
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
=5V, IC=8.5A
V
CE
IB1=1.6A, IB2=-3.2A
10
69
Ω
4 µs
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2001 Fairchild Semiconductor Corporation Rev. B, August 2001
Thermal Resistance, Junction to Case 2.08 °C/W
Typical Characteristics
FJAF6916
12
10
8
6
4
[A], COLLECTOR CURRENT
2
C
I
0
0246810
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 2.0A
IB = 0.6A
IB = 0.4A
IB = 0.2A
100
Ta = 1250C
10
, DC CURRENT GAIN
FE
h
Ta = - 250C
1
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristics Figure 2. DC Current Gain
10
IC = 3 I
B
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Ta = 1250C
Ta = 250C
Ta = - 250C
10
IC = 5 I
B
1
Ta = 1250C
0.1
[V], SATURATION VOLTAGE
CE(S)
V
0.01
0.1 1 10 100
IC[A], COLLECTOR CURRENT
VCE = 5V
Ta = 250C
Ta = 250C
Ta = - 250C
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
16
VCE = 5V
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 1250C
VBE[V], BASE EMITTER VOLTAGE
10
- 250C250C
1
s], SWITCHING TIME
µ
[
STG
& t
F
t
0.1
0.1 1 10
IB2 [A], REVERSE BASE CURRENT
t
STG
t
F
VCC = 200V, IC = 8A
IB1 = 1.6A
Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time
©2001 Fairchild Semiconductor Corporation Rev. B, August 2001
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