Fairchild Semiconductor FJAF6910 Datasheet
FJAF6910
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BV
• Low Saturation Voltage : V
• High Switching Speed : t
(sat) = 3V (Max.)
CE
(typ.) =0.15µs
F
• For Color Monitor
NPN Triple Diffused Planar Silicon Transistor
CBO
= 1700V
1
TO-3PF
1.Base 2.Collector 3.Emitter
FJAF6910
Absolute Maximum Ratings
TC=25°C unless otherwise noted
Symbol Parameter Rating Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 20 A
I
CP
P
C
T
J
T
STG
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
Collector-Base Voltage 1700 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current (DC) 10 A
Collector Power Dissipation 60 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
I
CES
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 V
V
CE
(sat) Base-E mitter Saturat ion Voltage IC=6A, IB=1.5A 1.5 V
V
BE
* Storage Time VCC=200V, IC=6A, RL=33
t
STG
* Fall Time 0.3 µs
t
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Collector Cut-off Current VCB=1400V, RBE=0 1 mA
Collector Cut-off Current VCB=800V, IE=0 10 µA
Emitter Cut-off Current VEB=4V, IC=0 1 mA
Collector-Base Breakdown Voltage IC=500µA, IE=0 1700 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V
DC Current Gain VCE=5V, IC=1A
=5V, IC=6A
V
CE
10
710
Ω
4 µs
IB1=1.2A, IB2= - 2.4A
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2001 Fairchild Semiconductor Corporation Rev. A, July 2001
Thermal Resistance, Junction to Case 2.08 °C/W
Typical Characteristics
FJAF6910
10
8
6
4
2
[A], COLLECTOR CURRENT
C
I
0
02468101214
IB = 2.0A
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
Ta = 125oC
Ta = 25oC
Ta = - 25oC
100m
10
IC = 5 I
B
1
IB = 0.6A
IB = 0.4A
IB = 0.2A
100
VCE = 5V
Ta = 125oC
10
, DC CURRENT GAIN
FE
h
Ta = - 25oC
1
0.1 1 10
Ta = 25oC
IC [A], COLLECTOR CURRENT
10
1
100m
Ta = 25oC
IC = 3 I
Ta = 125oC
Ta = - 25oC
B
(sat) [V], SATURATION VOLTAGE
CE
V
10m
0.1 1 10
IC [A], COLLECTOR CURRENT
(sat) [V], SATURATION VOLTAGE
CE
V
10m
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
16
VCE = 5V
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
25oC
125oC
VBE [V], BASE-EMITTER VOLTAGE
- 25oC
10
1
s], SWITCHING TIME
0.1
µ
[
F
& t
STG
t
0.01
110
IB2 [A], REVERSE BASE CURRENT
VCC = 200V,
= 6A, IB1 = 1.2A
I
C
t
STG
t
F
Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time
©2001 Fairchild Semiconductor Corporation
Rev. A, July 2001
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