Fairchild Semiconductor FJAF6812 Datasheet
FJAF6812
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BV
• High Switching Speed : t
(typ.) =0.1µs
F
• For Color Monitor
CBO
= 1500V
FJAF6812
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Rating Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 24 A
I
CP
P
C
T
J
T
STG
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 750 V
Emitter-Base Voltage 6 V
Collector Current (DC) 12 A
Collector Dissipation 60 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
I
CES
I
CBO
I
EBO
BV
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=8A, IB=2A 3 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=8A, IB=2A 1.5 V
V
BE
* Storage Time VCC=200V, IC=7A, RL=30
t
STG
*Fall Time 0.2 µs
t
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Collector Cut-off Current VCB=1400V, RBE=0 1 mA
Collector Cut-off Current VCB=800V, IE=0 10 µA
Emitter Cut-off Current VEB=4V, IC=0 1 mA
Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V
DC Current Gain VCE=5V, IC=1A
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
=5V, IC=8A
V
CE
IB1= 1.4A, IB2= - 2.8A
10
5
Ω
40
8
3 µs
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001
Thermal Resistance, Junction to Case 1.4 2.08 °C/W
Typical Characteristics
FJAF6812
11
Ib=1.8A
10
9
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
0 2 4 6 8 10 12 14
Ib=1.6A
VCE [V], COLLECTOR-EMITTER VOLTAGE
Ib=1.4A
Ib=1.2A
Ib=1.0A
Ib=800mA
Ib=600mA
Ib=400mA
Ib=200mA
100
125oC 75oC
25oCTa= - 25oC
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristics Figure 2. DC Current Gain
100
10
125oC
1
0.1
(sat) [V], SATURATION VO LT AG E
CE
V
0.01
0.1 1 10
75oC
IC [A], COLLECTOR CURRENT
IC = 5I
25oC
Ta = - 25oC
B
100
10
1
0.1
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10
IC [A], COLLECTOR CURRENT
VCE = 5V
IC = 3I
B
125oC
75oC
25oC
Ta = - 25oC
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
75oC
125oC
25oC
Ta = - 25oC
0
0.0 0.5 1.0 1.5
VBE [V], BASE-EMITTER VOLTAGE
VCE = 5V
10
1
s], FALL TIME
0.1
µ
s], STORAGE TIME
[
µ
F
t
[
STG
t
RESISTIVE LOAD
Vcc = 200V
IC = 7A
IB1 = 1.4A
0.01
-0.1 -1 -10
IB2 [A], REVERSE BASE CURRENT
t
STG
t
F
Figure 5. Base-Emitter On Voltage Figure 6. Switching Time
©2001 Fairchild Semiconductor Corporation Rev. B1, May 2001
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