Fairchild Semiconductor FJA4310 Datasheet
Audio Power Amplifier
• High Current Capability : IC=10A
• High Power Dissipation
•Wide S.O.A
• Complement to FJA4210
FJA4310
FJA4310
1
TO-3P
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage 200 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 6 V
Collector Current (DC) 10 A
Base Current (DC) 1.5 A
Collector Dissipation (TC=25°C) 100 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=5A, IB=0.5A 0.5 V
V
CE
C
ob
f
T
* Pulse Test : PW=20µs
Collector-Base Breakdown Voltage IC=5mA, IE=0 200 V
Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ 140 V
Emitter-Base Breakdown Voltage IE=5mA, IC=0 6 V
Collector Cut-off Current VCB=200V, IE=0 10 µA
Emitter Cut-off Cu rr en t VEB=6V, IC=0 10 µA
*
DC Current Gain VCE=4V, IC=3A 50 180
Output Capacitance VCB=10V, f=1MHz 250 pF
Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. B, June 2002
50 ~ 100 70 ~ 140 90 ~ 180
Typical Characteristics
IB = 300mA
10
IB = 400mA
9
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
01234
VCE [V], COLLECTOR-EMITTER VOL T AG E
Figure 1. Static Characterstic Figure 2. DC current Gain
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 50mA
IB = 20mA
1000
Ta = 125 oC
100
Ta = - 25 oC
, DC CURRENT G AIN
FE
h
10
0.1 1 10
Ta = 25 oC
IC [A], COLLECTOR CURRENT
FJA4310
VCE = 4 V
3.0
2.5
2.0
1.5
1.0
0.5
(sat) [V], SATURATION VOLTAGE
CE
V
0.0
0.0 0.4 0.8 1.2 1.6 2.0
IC= - 5A
IB [A], BASE CURRENT
Figure 3. V
10
(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage
CE
VCE = 4 V
8
6
4
Ta = 25 oC
IC= - 10A
1
IC = 10 I
B
Ta = 125 oC
0.1
(sat) [V], SATURAT IO N VOLTAGE
CE
V
0.01
0.01 0.1 1 10
Ta = 25 oC
Ta = - 25 oC
IC [A], COLLECTOR CURRENT
IC (Pulse)
10
IC (DC)
1
t=10ms
t=100ms
2
[A], COLLECTOR CURRENT
C
I
0
Ta = 125 oC
0.0 0.5 1.0 1.5
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Ta = - 25 oC
[A], COLLECTOR CURRENT
C
I
TC = 25oC
Single Pulse
0.1
10 100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Rev. B, June 2002
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