Audio Power Amplifier
• High Current Capability : IC= -10A
• High Power Dissipation
•Wide S.O.A
• Complement to FJA4310
FJA4210
FJA4210
1
TO-3P
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
B
C
J
STG
Collector-Base Voltage -200 V
Collector-Emitter Voltage -140 V
Emitter-Base Voltage -6 V
Collector Current (DC) -10 A
Base Current (DC) -1.5 A
Collector Dissipation (TC=25°C) 100 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=-5A, IB=-0.5A -0.5 V
V
CE
C
ob
f
T
* Pulse Test : PW=20µs
Collector-Base Breakdown Voltage IC=-5mA, IE=0 -200 V
Collector-Emitter Breakdown Voltage IC=-50mA, RBE=∞ -140 V
Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -6 V
Collector Cut-off Current VCB=-200V, IE=0 -10 µA
Emitter Cut-off Cu rr en t VEB=-6V, IC=0 -10 µA
*
DC Current Gain VCE=-4V, IC=-3A 50 180
Output Capacitance VCB=-10V, f=1MHz 400 pF
Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. B, June 2002
50 ~ 100 70 ~ 140 90 ~ 180
Typical Characteristics
FJA4210
-10
-9
-8
-7
-6
-5
-4
-3
-2
[A], COLLECTOR CURRENT
C
I
-1
-0
-0 -1 -2 -3 -4
IB = - 400mA
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic Figure 2. DC current Gain
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
(sat) [V], SATU R ATION VO L TAGE
CE
V
-0.0
-0.0 -0.4 -0.8 -1.2 -1.6 -2.0
IC= - 5A
IB = - 300mA IB = - 250mA
IB = - 200mA
IB = - 150mA
IB = - 100mA
IB = - 50mA
IB = - 20mA
IC= - 10A
1000
Ta = 125 oC
100
Ta = - 25 oC
, DC CURRENT G AIN
FE
h
10
-0.1 -1 -10
Ta = 25 oC
IC [A], COLLECTOR CURRENT
-1
IC = 10 I
B
-0.1
Ta = 125 oC
(sat) [V], SATURATI O N V O LTAGE
CE
V
Ta = 25 oC
-0.01
-0.01 -0.1 -1 -10
Ta = - 25 oC
VCE = - 4 V
Figure 3. V
-10
CE
VCE = - 4 V
-8
-6
-4
Ta = 125 oC
-2
[A], COLLECTOR CURRENT
C
I
-0
-0.0 -0.5 -1.0 -1.5 -2.0
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
IB [A], BASE CURRENT
IC [A], COLLECTOR CURRENT
(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage
t=10ms
t=100ms
Ta = 25 oC
Ta = - 25 oC
IC (Pulse)
-10
IC (DC)
-1
[A], COLLECTOR CU RRENT
C
I
TC = 25oC
Single Pulse
-0.1
-10 -100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Rev. B, June 2002