Fairchild Semiconductor FGS15N40L Datasheet

September 2001

FGS15N40L

IGBT

FGS15N40L

General Description

Insulated Gate Bipolar Transistors(IGBTs) with trench
gate structure have superior performance in conductance
and switching to planar gate structure and also have wide
noise immunity. These devices are well suitable for
strobe application

Application

• Strobe Flash

C

C

C

C

8-SOP

Absolute Maximum Ratings T

Symbol Description FGS15N40L Units

V

CES

V

GES

I

CM (1)

P

C

T

Operating Junction Temperature -40 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 400 V
Gate-Emitter Voltage ± 6V
Pulsed Collector Current 130 A
M a x i m u m P o w e r D i s s i p a t i o n @ Ta = 25°C2.0 W

Storage Temperature Range -40 to +150 °C
Maximum Lead Temp. for soldering

PurPoses from case for 5 secnds

G

E

E

E

= 25°C unless otherrwise noted

C

Features

• High Input Impedance

• High Peak Current Capability (130A)

• Easy Gate D r i v e

C

G

E

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJA

Notes: Mounted on 1” square PCB(FR4 or G-10 Material)

©2001 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient(PCB Mount) -- 62.5 °C/W

FGS15N40L Rev. A1

FGS15N40L

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
I

CES

I

GES

CES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 1mA 450 -- -- V
Collector Cut-off Current VCE = V
G-E leakage Current VGE = V

, VGE = 0V -- -- 10 µA

CES

, VCE = 0V -- -- ± 0.1 µA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E threshold Voltage IC = 0V, IC = 1mA - - 1.4 V
C-E Saturation Voltage IC = 130A , V

= 4.0V 2.0 4.5 8.0 V

GE

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 45 -- pF
Reverse Transfer Capacitance -- 30 -- pF

= 0V , V

V

GE

f = 1MHz

= 30V

CE

-- 3800 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Notes : Recommendation of Rg Value : Rg ≥15Ω

Turn-On Delay Time
Rise Time -- 1.5 -- us
Turn-Off Delay Time -- 0.15 0.3 us
Fall Time -- 1.5 3.0 us

= 300V , IC = 130A

V

CC

= 4.0V , RG = 15Ω *

V

GE

Resistive Load

-- 0.15 -- us

©2001 Fairchild Semiconductor Corporation FGS15N40L Rev. A1