Fairchild Semiconductor FGP30N6S2D, FGH30N6S2D Datasheet

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth

TM

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

July 2001

Diode

General Description

The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava­lanche capability (UIS). These LGC devices shor ten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390

Package

JEDEC STYLE TO-247

E

JEDEC STYLE TO-220AB

C

G

Features

• 100kHz Op eration at 390V, 14A

• 200kHZ Operation at 390V, 9A

• 600V Switching SOA Capability

GE

o

= 15V

• Typical Fall Time. . . . . . . . . . .90ns at TJ = 125

• Low Gate Charge . . . . . . . . . 23nC at V

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .150mJ

• Low Conduction Loss

Symbol

C

JEDEC STYLE TO-263AB

E

C

G

G

C

C

G

E

Device Maximum Ratings T

Symbol Parameter Ratings Units

BV

CES

I

C25

I

C110

I

CM

V

GES

V

GEM

SSOA Switching Safe Operating Area at T

E

AS

P

T

T

STG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

©2001 Fairchild Semiconductor Corporation

Collector to Emitter Breakdown Voltage 600 V
Collector Current Continuous, TC = 25°C 45 A
Collector Current Continuous, TC = 110°C 20 A
Collector Current Pulsed (Note 1) 108 A
Gate to Emitter Voltage Continuous ±20 V
Gate to Emitter Voltage Pulsed ±30 V

Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V 150 mJ
Power Dissi pation Total TC = 25°C 167 W

D

Power Dissipation Derating T
Operating Junction Temperature Range -55 to 150 °C

J

Storage Junction Temperature Range -55 to 150 °C

= 25°C unless otherwise noted

C

= 150°C, Figure 2 60A at 600V

J

> 25°C 1.33 W/°C

C

FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

E

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

30N6S2D FGB30N6S2D TO-263AB 24mm 800
30N6S2D FGP30N6S2D TO-220AB - ­30N6S2D FGH30N6S2D TO-247

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BV

I

CES

I

GES

Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V

CES

Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA

T

= 125°C - - 2 mA

J

Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA

On State Characteristics

V

CE(SAT)

V

Collector to Emitter Saturation Voltage IC = 12A,

V

= 15V

GE

Diode Forward Voltage IEC = 12A - 2.1 2.5 V

EC

= 25°C - 1.95 2.5 V

T

J

= 125°C - 1.8 2.0 V

T

J

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

GEP

Gate Charge IC = 12A,

V

= 300V

CE

Gate to Emitter Threshold Voltage IC = 250µA, V
Gate to Emitter Plateau Voltage IC = 12A, VCE = 300V - 6.5 8.0 V

= 15V - 23 29 nC

V

GE

= 20V - 26 33 nC

V

GE

= 600V 3.5 4.3 5.0 V

CE

Switching Characteristics

SSOA Switching SOA T

t

d(ON)I

t

d(OFF)I

E

ON1

E

ON2

E

OFF

t

d(ON)I

t

d(OFF)I

E

ON1

E

ON2

E

OFF

Current Turn-On Delay Time IGBT and Diode at TJ = 25°C,
Current Rise Time - 10 - ns

t

rI

Current Turn-Off Delay Time - 40 - ns

t

Current Fall Time - 53 - ns

fI

Turn-On Energy (Note 2) - 55 - µJ
Turn-On Energy (Note 2) - 110 - µJ
Turn-Off Energy (Note 3) - 100 150 µJ
Current Turn-On Delay Time IGBT and Diode at TJ = 125°C
Current Rise Time - 17 - ns

t

rI

Current T urn-Off Delay Time - 73 100 ns
Current Fall Time - 90 100 ns

t

fI

Turn-On Energy (Note 2) - 55 - µJ
Turn-On Energy (Note 2) - 160 200 µJ
Turn-Off Energy (Note 3) - 250 350 µJ
Diode Reverse Recovery Time IEC = 12A, dIEC/dt = 200A/µs - 35 46 n s

t

rr

= 150°C, RG = 10Ω, VGE =

J

15V, L = 100µH, V

I

=12A,

CE

= 390V,

V

CE

= 15V,

V

GE

R

=10Ω

G

= 600V

CE

L = 500µH
Test Circuit - Figure 26

= 12A,

I

CE

V

= 390V,

CE

V

= 15V,

GE

= 10Ω

R

G

L = 500µH
Test Circuit - Figure 26

I

= 1A, dIEC/dt = 200A/µs - 25 32 ns

EC

60 - - A

-6-ns

-11-ns

Thermal Characteristics

R

NOTE:

Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E

2.

of the IGBT only . E
as the IGBT. The diode type is specified in figure 26.

3. Tur n- Off E nergy Loss ( E

the input pulse and ending at the point where the collector current equals zero (I
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc­es the true total Turn-Off Energy Loss.

©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

Thermal Resistance Junction-Case IGBT - - 0.75 °C/W

θJC

Diode - - 2.0 °C/W

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T

ON2

) is defined as the integral of the instantaneous power loss starting at the trailing edge of

OFF

= 0A). All devices were tested per

CE

ON1

is the turn-on loss

J

Typical Performance Curves

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

50

40

30

20

10

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

Figure 1. DC Collector Current vs Case

Temperature

1000

f

= 0.05 / (t

MAX1

100

f

= (PD - PC) / (E

MAX2

PC = CONDUCTION DISSIPATION

(DUTY FA CTOR = 50%)

R

= 0.49oC/W, SEE NOTES

ØJC

, OPERATING FREQUENCY (kHz)

TJ = 125oC, RG = 3Ω, L = 200mH, V

MAX

f

10

1

VGE = 10V VGE = 15V

+ t

ON2

d(ON)I

+ E

OFF

)

)

= 390V

CE

10

d(OFF)I

ICE, COLLECTOR TO EMITTER CURRENT (A)

T

C

75oC

20

Figure 3. Operating Frequency vs Collector to

Emitter Current

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

TJ = 150oC, RG = 10Ω, V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V, L = 100mH

GE

300 400200100 500 600

Figure 2. Minimum Switching Safe Operating Area

12

s)

µ

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (

30

SC

t

VCE = 390V, RG = 10Ω, TJ = 125oC

I

t

SC

9 10111213141516

VGE, GATE T O E MITTE R VOLTAGE (V)

SC

Figure 4. Short Circuit Withstand Time

350

300

250

200

150

100

7000

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

18

DUTY CYCLE < 0.5%, V

16

PULSE DURATION = 250ms

14

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0.75

0.50 1.00

= 10V

GE

TJ = 150oC

TJ = 25oC

1.50 2.25

1.25

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

1.75

TJ = 125oC

2.00

18

DUTY CYCLE < 0.5%, VGE =15V

16

PULSE DURATION = 250ms

14

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

.5 1 1.50 2.0 2.25.75 1.751.25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 150oC

TJ = 125oC

TJ = 25oC

Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage

©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A

Typical Performance Curves (Continued)

FGH30N6S2D / FGP30N6S2D / FGB30N6S2D

400

RG = 10Ω, L = 500mH, VCE = 390V

J)

µ

350

300

TJ = 125oC, VGE = 10V, VGE = 15V

250

200

150

100

, TURN-ON ENERGY LOSS (

ON2

E

50

0

5 101520250

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 10V, VGE = 15V

Figure 7. Turn-On Energy Loss vs Collector to

Emitter Current

16

RG = 10Ω, L = 500µH, VCE = 390V

14

12

10

8

TJ = 25oC, TJ = 125oC, VGE = 10V

600

RG = 10Ω, L = 500mH, VCE = 390V

J)

µ

500

400

TJ = 125oC, VGE = 10V, VGE = 15V

300

200

TURN-OFF ENERGY LOSS (

100

OFF

E

0

5 101520250

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, VGE = 10V, VGE = 15V

Figure 8. Turn-Off Energy Loss vs Collector to

Emitter Current

30

RG = 10Ω, L = 500mH, VCE = 390V

25

20

TJ = 125oC, V

15

= 15V, V

GE

= 10V

GE

6

4

, TURN-ON DELAY TIME (ns)

2

d(ON)I

t

0

5 101520250

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 125oC, VGE = 15V

Figure 9. Turn-On Delay Time vs Collector to

Emitter Current

90

RG = 10Ω, L = 500µH, VCE = 390V

80

70

60

50

40

) TURN-OFF DELAY TIME (ns)

30

d(OFF

t

20

0 5 10 15 20 25

ICE, COLLECTOR TO EMITTER CURRENT (A)

Figure 11. Turn-Off Delay Time vs Collector to

Emitter Current

, RISE TIME (ns)

rI

10

t

TJ = 25oC, V

5

0

5101520250
ICE, COLLECTOR TO E MITTER CURRENT (A)

GE

= 10V, V

=15V

GE

Figure 10. Turn-On Rise Time vs Collector to

Emitter Current

120

RG = 10Ω, L = 500µH, VCE = 390V

100

TJ = 125oC, VGE = 10V OR 15V

80

, FALL TIME (ns)

fI

t

60

TJ = 25oC, VGE = 10V OR 15V

40

I

CE

105 1520250

, COLLECTOR TO EMITTER CURRENT (A)

Figure 12. Fall Time vs Collector to Emitter

Current

©2001 Fairchild Semiconductor Corporation FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A