Fairchild Semiconductor FGP20N6S2D Datasheet
©2002 Fairchild Semiconductor Corporation
July 2002
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast s wit ching times and UIS capabilit y are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Features
• 100kHz Op eration at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . .85ns at TJ = 125
o
C
• Low Gate Charge . . . . . . . . . 30nC at V
GE
= 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .100mJ
• Low Conduction Loss
• Low E
on
• Soft Recovery Diode
Device Maximum Ratings T
C
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
BV
CES
Collector to Emitter Breakdown Voltage 600 V
I
C25
Collector Current Continuous, TC = 25°C 28 A
I
C110
Collector Current Continuous, TC = 110°C 13 A
I
CM
Collector Current Pulsed (Note 1) 40 A
V
GES
Gate to Emitter Voltage Continuous ±20 V
V
GEM
Gate to Emitter Voltage Pulsed ±30 V
SSOA Switching Safe Operating Area at T
J
= 150°C, Figure 2 35A at 600V A
E
AS
Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V 100 mJ
P
D
Power Dissipation Total TC = 25°C 125 W
Power Dissipation Derating T
C
> 25°C 1.0 W/°C
T
J
Operating Junction Temperature Range -55 to 150 °C
T
STG
Storage Junction Temperature Range -55 to 150 °C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction tem perature.
Package
TO-263AB
TO-220AB
E
C
G
E
G
TO-247 E
C
G
Symbol
COLLECTOR (FLANGE)
C
E
G
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Package Marking and Ordering Information
Electrical Characteristics
TJ = 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking Device Package Tape Width Quantity
20N6S2D FGH20N6S2D TO-247 N/A 30
20N6S2D FGP20N6S2D TO-220AB N/A 50
20N6S2D FGB20N6S2D TO-263AB N/A 50
20N6S2D FGB20N6S2DT TO-263AB 24mm 800 units
Symbol Parameter Test Conditions Min Typ Max Units
BV
CES
Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V
I
CES
Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA
T
J
= 125°C- - 2.0 mA
I
GES
Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA
V
CE(SAT)
Collector to Emitter Saturation Voltage IC = 7.0A,
V
GE
= 15V
T
J
= 25°C-2.22.7V
T
J
= 125°C- 1.92.2 V
V
EC
Diode Forward Voltage IEC = 7.0A - 1.9 2.7 V
Q
G(ON)
Gate Charge IC = 7.0A,
V
CE
= 300V
V
GE
= 15V - 30 36 nC
V
GE
= 20V - 38 45 nC
V
GE(TH)
Gate to Emitter Threshold Voltage IC = 250µA, V
CE
= 600V 3.5 4.3 5.0 V
V
GEP
Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V - 6.5 8.0 V
SSOA Switching SOA T
J
= 150°C, RG = 25Ω, VGE =
15V, L = 0.5mH V
CE
= 600V
35 - - A
t
d(ON)I
Current T urn-On Delay Time IGBT and Diode at TJ = 25°C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25Ω
L = 0.5mH
Test Circuit - Figure 26
-7.7-ns
t
rI
Current Rise Time - 4.5 - ns
t
d(OFF)I
Current Turn-Off Delay Time - 87 - ns
t
fI
Current Fall Time - 50 - ns
E
ON1
Turn-On Energy (Note 1) - 25 - µJ
E
ON2
Turn-On Energy (Note 1) - 85 - µJ
E
OFF
Turn-Off Energy (Note 2) - 58 75 µJ
t
d(ON)I
Current T urn-On Delay Time IGBT and Diode at TJ = 125°C
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25Ω
L = 0.5mH
Test Circuit - Figure 26
-7-ns
t
rI
Current Rise Time - 4.5 - ns
t
d(OFF)I
Current T urn-Off Delay Time - 120 145 ns
t
fI
Current Fall Time - 85 105 ns
E
ON1
Turn-On Energy (Note 1) - 20 - µJ
E
ON2
Turn-On Energy (Note 1) - 125 140 µJ
E
OFF
Turn-Off Energy (Note 2) - 135 180 µJ
t
rr
Diode Reverse Recovery Time IEC = 7A, dIEC/dt = 200A/µs - 26 31 ns
I
EC
= 1A, dIEC/dt = 200A/µs - 20 24 ns
R
θJC
Thermal Resistance Junction-Case IGBT - - 1.0 °C/W
Diode 2.2 °C/W
NOTE:
1.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss
of the IGBT only . E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in figure 26.
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
the input pulse and ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Typical Performance Curves
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage F igure 6. Collector to Emitter On-State Voltage
TC, CASE TEMPERATURE (oC)
I
CE
, DC COLLECTOR CURRENT (A)
50
5
0
10
25 75 100 125 150
30
20
15
25
V
GE
= 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
7000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
20
30
15
40
TJ = 150oC, RG = 25Ω, V
GE
= 15V, L = 500µH
5
10
35
25
f
MAX
, OPERATING FREQUENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
20
400
2010
700
100
TJ = 125oC, RG = 25Ω, L = 500µH, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 0.27oC/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (PD - PC) / (E
ON2
+ E
OFF
)
VGE = 15V
T
C =
75oC
VGE = 10V
VGE, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
91112
10
6
90
150
13 14
12
8
60
120
180
210
10 15
4
2
t
SC
I
SC
VCE = 390V, RG = 25Ω, TJ = 125oC
0.50 1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
2
4
1.25 2.0 2.25
8
6
14
TJ = 25oC
0.75
TJ = 150oC
12
1.5 1.75
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 15V
TJ = 125oC
10
2.5 2.75
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0.50 1.0 1.5 2.0 2.50.75
TJ = 150oC
1.751.25
TJ = 25oC
2.25
0
2
4
8
6
14
12
10
TJ = 125oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 10V