Fairchild Semiconductor FGL60N170D Datasheet

October 2001

FGL60N170D

FGL60N170D

General Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
FGL60N170D is designed for the Induction Heating
applications.

Application

Home Appliance, Induction Heater, IH JAR, Micro Wave Oven

TO-264

G

C

E

Features

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

• Built-in Fast Recovery Diode

C

G

E

= 5.0 V @ IC = 60A

CE(sat)

IGBT

Absolute Maximum Ratings T

Symbol Description FGL60N170D Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 1700 V
Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C60 A
Collector Current @ T
Pulsed Collector Current 180 A
Diode Continuous Forward Current @ TC = 100°C15 A
Diode Maximum Forward Current 150 A
Maximum Power Dissipation @ TC = 25°C 200 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for So ldering
Purposes from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C30 A

C

= 100°C80 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 0.625 °C/W

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W

θJC

R

θA

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

©2001 Fairchild Semiconductor Corporation

FGL60N170D Rev. B

FGL60N170D

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
I

CES

I

GES

CES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 3mA 1700 -- -- V
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V

, VGE = 0V -- -- 3.0 mA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 60mA, VCE = V
Collector to Emitter

Saturation Voltage

I

= 60A

C

,

VGE = 15V

GE

3.5 5.0 7.5 V

-5.06.0V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 220 -- pF
Reverse Transfer Capacitance -- 80 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 2500 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
ge
gc

Turn-On Delay Time
Rise Time -- 350 700 ns
Turn-Off Delay Time -- 200 400 ns
Fall Time -- 100 300 ns
Total Gate Charge
Gate-Emitter Charge -- 20 30 nC
Gate-Collector Charge -- 45 70 nC

= 600 V, IC = 60A,

V

CC

R

= 51Ω, V

G

GE

Resistive Load, T

= 600 V, IC = 60A,

V

CE

V

GE

= 15V

= 15V,

= 25°C

C

-- 100 200 ns

-- 120 180 nC

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

I

V

FM

Diode Forward Voltage

trr Diode Reverse Recovery Time
I

R

C

J

Inatantaneous Reverse Current
Junction Capacitance

= 15 A

F

= 60 A

I

F

= 60 A, di/dt = 20 A/uS

I

F

= 1700V

V

RRM

V

CE

= 10V, V

= 0V, f = 1MHz

GE

-- 1.35 1.6

-- 1.92 2.2

-- 0.6 1.0 us

-- 0.3 5 uA

-- 80 -- pF

V

©2001 Fairchild Semiconductor Corporation FGL60N170D Rev. B

FGL60N170D

100

Common Emitter

= 25oC

T

C

80

[A]

C

60

40

Collector Current, I

20

0

02468

20V

15V

10V

8V

VGE = 6V

Collector - E mitter Voltage , VCE [V]

120

Common Emitter

= 15V

V

GE

100

T

= 25oC

C

TC = 125oC

[A]

80

C

60

40

Collector Current, I

20

0

0246810

Collector - Em itte r Voltage, VCE [V]

Fig 1. Typical Output Chacracteristics Fig 2. Typical Saturation Voltage Characteristics

7

6

[V]

CE

5

Common Emitter
VGE = 15V

IC = 80A

IC= 60A

5000

4000

3000

Cies

Common Emitter
VGE=0V, f=1MHz

T

=25oC

C

4

IC = 30A

3

Collector - Emitter Voltage, V

2

25 50 75 100 125 150

Case Temperature, TC [oC]

Fig 3. Collector to Emitter Saturation
Voltag e vs . Case Temperature

20

Common Emitter
TC=25oC

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

Gate - Emitter Voltage, VGE [V]

80A

60A

30A

2000

Capacitance [pF]

1000

0

110

Coes
Cres

Collector - Emitter Voltage, VCE [V]

Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage

20

Common Emitter
TC=125oC

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

Gate - Emitter Voltage, VGE [V]

80A

60A

30A

Fig 5. Satur ation Voltage vs. V

©2001 Fairchild Semiconductor Corporation FGL60N170D Rev. B

GE

Fig 6. Saturation Voltage vs. V

GE