Fairchild Semiconductor FGL60N100D Datasheet
FGL60N100D
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate
structure have superior performance in conduction and
switching to planar gate structure, and also have wide noise
immunity. These devices are well suitable for IH
applications
Application
Home Appliance, Induction Heater, IH JAR, Micro Wave Oven
TO-264
G
C
E
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Built-in Fast Recovery Diode
G
G
CE(sat)
C
C
E
E
IGBT
= 2.5V @ IC = 60A
Absolute Maximum Ratings T
Symbol Description FGL60N100D Units
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
Operating Junction Temperature -55 to +150 °C
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 1000 V
Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C60 A
Collector Current @ T
Pulsed Collector Current 120 A
Diode Continuous Forward Current @ TC = 100°C15 A
M a x i m u m P o w e r D i s s i p a t i o n @ TC = 25°C 176 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for soldering
Purposes, 1/8” from case for 5 seconds
= 25°C unless otherwise noted
C
= 100°C42 A
C
= 100°C70 W
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction-to-Case -- 0.71 °C/W
θJC
(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W
R
θJC
R
θJA
Thermal Resistance, Junction-to-Ambient -- 25 °C/W
©2002 Fairchild Semiconductor Corporation FGL60N100D Rev. A
FGL60N100D
Electrical Characteristics of IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
I
CES
I
GES
Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA
G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 60mA, VCE = V
= 10A, VGE = 15V -- 1.6 2.0 V
Collecto r to Emitter
Saturation Voltage
I
I
C
= 60A
C
,
VGE = 15V
GE
4.0 5.0 7.0 V
-- 2.5 2.9 V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 160 -- pF
Reverse Transfer Capacitance -- 140 -- pF
=10V, VGE = 0V,
V
CE
f = 1MHz
-- 6300 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
ge
gc
Turn-On Delay Time
Rise Time -- 360 700 ns
Turn-Off Delay Time -- 410 700 ns
Fall Time -- 240 330 ns
Total Gate Charge
Gate-Emitter Charge -- 45 -- nC
Gate-Collector Charge -- 80 -- nC
= 600V, IC = 60A,
V
CC
= 51Ω, VGE=15V,
R
G
Resistive Load, T
= 600 V, IC = 60A,
V
CE
V
GE
= 15V
= 25°C
C
-- 160 400 ns
-- 230 300 nC
Electrical Characteristics of DIODE T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
= 15A -- 1.2 1.7 V
I
V
FM
t
rr
I
R
Diode Forward Voltage
Diode Reverse Recovery Time IF = 60A di/dt = -20A/us
Instantaneous Reverse Current V
F
= 60A -- 1.8 2.1 V
I
F
RRM
= 1000V -- 0.05 2 uA
1.2 1.5 us
©2002 Fairchild Semiconductor Corporation
FGL60N100D Rev. A
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