Fairchild Semiconductor FGK60N6S2D Datasheet

FGK60N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth

TM

FGK60N6S2D

June 2002

Diode

General Description

The FGK60N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and av alanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These de vices are ideally suited for high volt ­age switched mode power supply applications where low
conduction loss, fast s wit ching times and UIS capabilit y are
essential. SMPS II LGC devices have been specially de­signed for:

• Power Factor Correction (PFC) circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

IGBT formerly Developmental Type TA49346
Diode formerly Developmental Type TA49393

Package

JEDEC STYLE STRETCH TO-247

E

Features

• 100kHz Op eration at 390V, 52A

• 200kHZ Operation at 390V, 31A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . .77ns at TJ = 125

• Low Gate Charge . . . . . . . . 140nC at V

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .700mJ

• Low Conduction Loss

Symbol

C

G

G

C

GE

o

= 15V

C

E

Device Maximum Ratings T

Symbol Parameter Ratings Units

BV

CES

I

C25

I

C110

I

CM

V

GES

V

GEM

SSOA Switching Safe Operating Area at T

E

AS

P

T

T

STG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction t em perat ure.

©2002 Fairchild Semiconductor Corporation

Collector to Emitter Breakdown Voltage 600 V
Collector Current Continuous, TC = 25°C 75 A
Collector Current Continuous, TC = 110°C 75 A
Collector Current Pulsed (Note 1) 320 A
Gate to Emitter Voltage Continuous ±20 V
Gate to Emitter Voltage Pulsed ±30 V

Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V 700 mJ
Power Dissi pation Total TC = 25°C 625 W

D

Power Dissipation Derating T
Operating Junction Temperature Range -55 to 150 °C

J

Storage Junction Temperature Range -55 to 150 °C

= 25°C unless otherwise noted

C

= 150°C, Figure 2 200A at 600V

J

> 25°C 5 W/°C

C

FGK60N6 S2D Rev. A1

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

60N6S2D FGK60N6S2D TO-247 N/A 30

FGK60N6S2D

Electrical Characteristics

TJ = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BV

I

CES

I

GES

Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V

CES

Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA

= 125°C- - 3 mA

T

J

Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA

On State Characteristics

V

CE(SAT)

V

Collector to Emitter Saturation Voltage IC = 40A,

V

= 15V

GE

Diode Forward Voltage IEC = 40A - 2.1 2.6 V

EC

= 25°C-1.92.5V

T

J

= 125°C - 1.65 2.2 V

T

J

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

GEP

Gate Charge IC = 40A,

= 300V

V

CE

Gate to Emitter Threshold Voltage IC = 250µA, V
Gate to Emitter Plateau Voltage IC = 40A, VCE = 300V - 6.5 8.0 V

V

= 15V - 140 175 nC

GE

= 20V - 180 228 nC

V

GE

CE

= V

GE

3.5 4.3 5.0 V

Switching Characteristics

SSOA Switching SOA T

t

d(ON)I

t

d(OFF)I

E

ON1

E

ON2

E

OFF

t

d(ON)I

t

d(OFF)I

E

ON1

E

ON2

E

OFF

Current Turn-On Delay Time IGBT and Diode at TJ = 25°C,
Current Rise Time - 15 - ns

t

rI

Current Turn-Off Delay Time - 70 - ns
Current Fall Time - 50 - ns

t

fI

Turn-On Energy (Note 2) - 400 - µJ
Turn-On Energy (Note 2) - 490 - µJ
Turn-Off Energy (Note 3) - 310 450 µJ
Current Turn-On Delay Time IGBT and Diode at TJ = 125°C
Current Rise Time - 32 - ns

t

rI

Current T urn-Off Delay Time - 110 150 ns
Current Fall Time - 77 90 ns

t

fI

Turn-On Energy (Note 2) - 400 450 µJ
Turn-On Energy (Note 2) - 750 850 µJ
Turn-Off Energy (Note 3) - 688 950 µJ
Diode Reverse Recovery Time IEC =40A, dIEC/dt = 200A/µs - 75 90 ns

t

rr

= 150°C, RG = 3Ω, VGE =

J

15V, L = 100µH, V

I

=40A,

CE

= 390V,

V

CE

= 15V,

V

GE

R

=3Ω

G

= 600V

CE

L = 100µH
Test Circuit - Figure 26

I

= 40A,

CE

= 390V,

V

CE

= 15V,

V

GE

R

= 3Ω

G

L = 100µH
Test Circuit - Figure 26

= 1A, dIEC/dt = 200A/µs - 50 60 ns

I

EC

200 - - A

-18-ns

-27-ns

Thermal Characteristics

R

NOTE:

2.

Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
of the IGBT only. E
as the IGBT. The diode type is specified in figure 26.

3. Turn-Off Energy Loss (E

the input pulse and ending at the point where the collector current equals zero (I
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc­es the true total Turn-Off Energy Loss.

©2002 Fairchild Semiconductor Corporation FGK60N6 S2D Rev. A1

Thermal Resistance Junction-Case IGBT - - 0.2 °C/W

θJC

Diode 0.75 °C/W

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T

ON2

) is defined as the integral of the instantaneous power loss starting at the trailing edge of

OFF

= 0A). All devices were tested per

CE

ON1

is the turn-on loss

J

Typical Performance Curves

FGK60N6S2D

175

150

125

100

PACKAGE LIMITED

75

50

, DC COLLECTOR CURRENT (A)

CE

I

25

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

TJ = 150oC

Figure 1. DC Collector Current vs Case

Temperature

1000

TJ = 125oC, RG = 3Ω, L = 100µH, VCE = 390V

TC = 75oC

500

50

VGE = 15V

100

100

, OPERATING FREQUENCY (kHz)

MAX

f

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

50

30

(DUTY FACTOR = 50%)

R

= 0.2oC/W, SEE NOTES

ØJC

5

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

10

d(OFF)I

ON2

+ t

d(ON)I

+ E

OFF

)

)

VGE = 10V

30

Figure 3. Operating Frequency vs Collector to

Emitter Current

225

TJ = 150oC, RG = 3Ω, V

200

175

150

125

100

75

50

, COLLECTOR TO EMITTER CURRENT (A)

25

CE

I

0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

= 15V, L = 100µH

GE

300 400200100 500 600

7000

Figure 2. Minimum Switching Safe Operating Area

16

VCE = 390V, RG = 3Ω, TJ = 125oC

14

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

t

0

9

11

10

VGE, GATE TO EMITTER VOLTAGE (V)

I

SC

t

SC

12

13

14

1100

1000

900

800

700

600

500

, PEAK SHORT CIRCUIT CURRENT (A)

400

I

300

16

15

Figure 4. Short Circuit Withstand Time

SC

80

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0 0.4 0.6 1.20.2 0.8 1.0 1.6 1.81.4 2.0 2.2

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 10V

GE

TJ = 125oC

TJ = 150oC

TJ = 25oC

80

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

00.4

0.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V

GE

TJ = 125oC

TJ = 150oC

0.8 1.0

0.6 1.2

TJ = 25oC

1.6 1.81.4 2.0 2.2

Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage

©2002 Fairchild Semiconductor Corporation FGK60N6 S2D Rev. A1