Fairchild Semiconductor FGH50N6S2D Datasheet

FGH50N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth

TM

FGH50N6S2D

July 2002

Diode

General Description

The FGH50N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and av alanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These de vices are ideally suited for high volt ­age switched mode power supply applications where low
conduction loss, fast s wit ching times and UIS capabilit y are
essential. SMPS II LGC devices have been specially de­signed for:

• Power Factor Correction (PFC) circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

IGBT (co-pack) formerly Developmental Type TA49344
Diode formerly Developmental Type TA49392

Package

JEDEC STYLE TO-247

Features

• 100kHz Op eration at 390V, 40A

• 200kHZ Operation at 390V, 25A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . .90ns at TJ = 125

• Low Gate Charge . . . . . . . . . 70nC at V

GE

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .480mJ

• Low Conduction Loss

Symbol

E

C

G

G

= 15V

C

o

C

Device Maximum Ratings T

Symbol Parameter Ratings Units

BV

CES

I

C25

I

C110

I

CM

V

GES

V

GEM

SSOA Switching Safe Operating Area at T

E

AS

P

T

T

STG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction t em perat ure.

©2002 Fairchild Semiconductor Corporation

Collector to Emitter Breakdown Voltage 600 V
Collector Current Continuous, TC = 25°C 75 A
Collector Current Continuous, TC = 110°C 60 A
Collector Current Pulsed (Note 1) 240 A
Gate to Emitter Voltage Continuous ±20 V
Gate to Emitter Voltage Pulsed ±30 V

= 150°C, Figure 2 150A at 600V

J

Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V 480 mJ
Power Dissi pation Total TC = 25°C 463 W

D

Power Dissipation Derating T
Operating Junction Temperature Range -55 to 150 °C

J

Storage Junction Temperature Range -55 to 150 °C

> 25°C 3.7 W/°C

C

= 25°C unless otherwise noted

C

E

FGH50N6S2D RevA2

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

50N6S2D FGH50N6S2D TO-247 N/A 30

FGH50N6S2D

Electrical Characteristics

TJ = 25°C unless otherwise noted

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off State Characteristics

BV

Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V

CES

I

Collector to Emitter Leakage Current VCE = 600V TJ = 25°C--250µA

CES

Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA

I

GES

= 125°C--2.8mA

T

J

On State Characteristics

V

CE(SAT)

V

Collector to Emitter Saturation Voltage IC = 30A,

V

= 15V

GE

Diode Forward Voltage IEC = 30A - 2.2 2.6 V

EC

= 25°C-1.92.7V

T

J

= 125°C-1.72.2V

T

J

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

Gate Charge IC = 30A,

= 300V

V

CE

Gate to Emitter Threshold Voltage IC = 250µA, V
Gate to Emitter Plateau Voltage IC = 30A, VCE = 300V - 6.5 8.0 V

GEP

V

= 15V - 70 85 nC

GE

= 20V - 90 110 nC

V

GE

CE

= V

GE

3.5 4.3 5.0 V

Switching Characteristics

SSOA Switching SOA T

t

t

d(OFF)I

E
E

E

t

d(ON)I

t

d(OFF)I

E
E

E

Current T urn-On Delay Time IGBT and Diode at TJ = 25°C,

d(ON)I

Current Rise Time - 15 - ns

t

rI

Current T urn-Off Delay Time - 55 - ns
Current Fall Time - 50 - ns

t

fI

Turn-On Energy (Note 2) - 260 - µJ

ON1

Turn-On Energy (Note 2) - 330 - µJ

ON2

Turn-Off Energy (Note 3) - 250 350 µJ

OFF

Current T urn-On Delay Time IGBT and Diode at TJ = 125°C
Current Rise Time - 15 - ns

t

rI

Current T urn-Off Delay Time - 92 150 ns
Current Fall Time - 88 100 ns

t

fI

Turn-On Energy (Note 2) - 260 - µJ

ON1

Turn-On Energy (Note 2) - 490 600 µJ

ON2

Turn-Off Energy (Note 3) - 575 850 µJ

OFF

Diode Reverse Recovery Time IEC = 30A, dIEC/dt = 200A/µs - 50 55 ns

t

rr

= 150°C, VGE = 15V, RG = 3Ω

J

L = 100µH, V

I

= 30A,

CE

= 390V,

V

CE

= 15V,

V

GE

R

= 3Ω

G

= 600V

CE

L = 200µH
Test Circuit - Figure 26

I

= 30A,

CE

= 390V,

V

CE

= 15V,

V

GE

R

= 3Ω

G

L = 200µH
Test Circuit - Figure 26

= 1A, dIEC/dt = 200A/µs - 30 42 ns

I

EC

150 - - A

-13-ns

-13-ns

Thermal Characteristics

R

NOTE:

2.

of the IGBT only. E
as the IGBT. The diode type is specified in figure 26.

3. Tur n -Off En ergy Loss (E

the input pulse and ending at the point where the collector current equals zero (I
JEDEC Standard No. 24-1 Method for Measurement of P o wer Device Turn-Off Switching Loss. This test method produc­es the true total Turn-Off Energy Loss.

©2002 Fairchild Semiconductor Corporation FGH50N6S2D RevA2

Thermal Resistance Junction-Case IGBT - - 0.27 °C/W

θJC

Diode - - 1.1 °C/W

Values for two Tur n -On loss condit ions are shown for the convenience of the circuit designer. E

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T

ON2

) is defined as the integral of the instantaneous power loss starting at the trailing edge of

OFF

= 0A). All devices were tested per

CE

is the turn-on loss

ON1

J

Typical Performance Curves T

= 25°C unless otherwise noted

J

FGH50N6S2D

140

120

100

80

PACKAGE LIMITED

60

40

, DC COLLECTOR CURRENT (A)

CE

20

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

Figure 1. DC Collector Current vs Case

Temperature

700

300

100

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FACTOR = 50%)

R

= 0.27oC/W, SEE NOTES

, OPERATING FREQUENCY (kHz)

MAX

f

ØJC

TJ = 125oC, RG = 3Ω, L = 200µH, V

10

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

ON2

+ t

d(ON)I

+ E

OFF

)

)

CE

= 390V

T

75oC

C =

VGE = 15V

VGE = 10V

6010 30

Figure 3. Operating Frequency vs Collector to

Emitter Current

200

TJ = 150oC, RG = 3Ω, V

150

100

50

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V, L = 100µH

GE

300 400200100 500 600

7000

Figure 2. Minimum Switching Safe Operating Area

14

VCE = 390V, RG = 3Ω, TJ = 125oC

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

t

0

91112 15

10 16

, GATE TO EMITTER VOLTAGE (V)

V

GE

I

SC

t

SC

13 14

900

800

700

600

500

400

300

200

, PEAK SHORT CIRCUIT CURRENT (A)
I

Figure 4. Short Circuit Withstand Time

SC

60

DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0.75

0.50 1.00

= 15V

GE

TJ = 150oC

1.25 2.00 2.25

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

1.50 1.75

TJ = 25oC

TJ = 125oC

60

DUTY CYCLE < 0.5%, VGE =10V
PULSE DURATION = 250µs

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0.50 1.00 1.50 2.0 2.250.75
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 25oC

TJ = 150oC

TJ = 125oC

1.751.25

Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage

©2002 Fairchild Semiconductor Corporation FGH50N6S2D RevA2