Fairchild Semiconductor FGH40N6S2D Datasheet

FGH40N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth

TM

FGH40N6S2D

July 2002

Diode

General Description

The FGH40N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and av alanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These de vices are ideally suited for high volt ­age switched mode power supply applications where low
conduction loss, fast s wit ching times and UIS capabilit y are
essential. SMPS II LGC devices have been specially de­signed for:

• Power Factor Correction (PFC) circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

IGBT (co-pack) formerly Developmental Type TA49340
Diode formerly Developmental Type TA49391

Package

Device Maximum Ratings T

Symbol Parameter Ratings Units

BV

CES

I

C25

I

C110

I

CM

V

GES

V

GEM

SSOA Switching Safe Operating Area at T

E

AS

P

T

T

STG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

Collector to Emitter Breakdown Voltage 600 V
Collector Current Continuous, TC = 25°C 75 A
Collector Current Continuous, TC = 110°C 35 A
Collector Current Pulsed (Note 1) 180 A
Gate to Emitter Voltage Continuous ±20 V
Gate to Emitter Voltage Pulsed ±30 V

Pulsed Avalanche Energy, ICE = 30A, L = 1mH, VDD = 50V 260 mJ
Power Dissipation Total TC = 25°C 290 W

D

Power Dissipation Derating T
Operating Junction Temper ature Range -55 to 150 °C

J

Storage Junction Temperature Range -55 to 150 °C

JEDEC STYLE TO-247

= 25°C unless otherwise noted

C

= 150°C, Figure 2 100A at 600V

J

> 25°C 2.33 W/°C

C

Features

• 100kHz Op eration at 390V, 24A

• 200kHZ Operation at 390V, 18A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . .85ns at TJ = 125

• Low Gate Charge . . . . . . . . . 35nC at V

GE

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .260mJ

• Low Conduction Loss

Symbol

E

C

G

COLLECTOR

(BOTTOM SIDE

METAL)

G

= 15V

C

E

o

C

©2002 Fairchild Semiconductor Corporation

FGH40N6S2D RevA4

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

40N6S2D FGH40N6S2D TO-247 N/A 30

FGH40N6S2D

Electrical Characteristics

TJ = 25°C unless otherwise noted

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off State Characteristics

BV

Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V

CES

I

Collector to Emitter Leakage Current VCE = 600V TJ = 25°C--250µA

CES

Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA

I

GES

= 125°C--2.0mA

T

J

On State Characteristics

V

CE(SAT)

V

Collector to Emitter Saturation Voltage IC = 20A,

V

= 15V

GE

Diode Forward Voltage IEC = 20A - 2.2 2.6 V

EC

= 25°C-1.92.7V

T

J

= 125°C-1.72.0V

T

J

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

Gate Charge IC = 20A,

= 300V

V

CE

Gate to Emitter Threshold Voltage IC = 250µA, V
Gate to Emitter Plateau Voltage IC = 20A, VCE = 300V - 6.5 8.0 V

GEP

V

= 15V - 35 42 nC

GE

= 20V - 45 55 nC

V

GE

CE

= V

GE

3.5 4.3 5.0 V

Switching Characteristics

SSOA Switching SOA T

t

t

d(OFF)I

E
E

E

t

d(ON)I

t

d(OFF)I

E
E

E

Current T urn-On Delay Time IGBT and Diode at TJ = 25°C,

d(ON)I

Current Rise Time - 10 - ns

t

rI

Current T urn-Off Delay Time - 35 - ns
Current Fall Time - 55 - ns

t

fI

Turn-On Energy (Note 2) - 115 - µJ

ON1

Turn-On Energy (Note 2) - 200 - µJ

ON2

Turn-Off Energy (Note 3) - 195 260 µJ

OFF

Current T urn-On Delay Time IGBT and Diode at TJ = 125°C
Current Rise Time - 18 - ns

t

rI

Current Turn-Off Delay Time - 68 85 ns
Current Fall Time - 85 105 ns

t

fI

Turn-On Energy (Note 2) - 115 - µJ

ON1

Turn-On Energy (Note 2) - 380 450 µJ

ON2

Turn-Off Energy (Note 3) - 375 600 µJ

OFF

Diode Reverse Recovery Time IEC = 1A, dIEC/dt = 200A/µs - 30 35 ns

t

rr

= 150°C, VGE = 15V, RG = 3Ω

J

L = 100µH, V

I

= 20A,

CE

= 390V,

V

CE

= 15V,

V

GE

R

= 3Ω

G

= 600V

CE

L = 200µH
Test Circuit - Figure 26

I

= 20A,

CE

= 390V,

V

CE

= 15V,

V

GE

R

= 3Ω

G

L = 200µH
Test Circuit - Figure 26

= 20A, dIEC/dt = 200A/µs - 39 48 ns

I

EC

100 - - A

-8.0-ns

-14-ns

Thermal Characteristics

R

NOTE:

2.

of the IGBT only. E
as the IGBT. The diode type is specified in figure 26.

3. Tur n -Off En ergy Loss (E

the input pulse and ending at the point where the collector current equals zero (I
JEDEC Standard No. 24-1 Method for Measurement of P o wer Device Turn-Off Switching Loss. This test method produc­es the true total Turn-Off Energy Loss.

©2002 Fairchild Semiconductor Corporation FGH40N6S2D RevA4

Thermal Resistance Junction-Case IGBT - - 0.43 °C/W

θJC

Diode - - 1.25 °C/W

Values for two Tur n -On loss condit ions are shown for the convenience of the circuit designer. E

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T

ON2

) is defined as the integral of the instantaneous power loss starting at the trailing edge of

OFF

= 0A). All devices were tested per

CE

is the turn-on loss

ON1

J

Typical Performance Curves T

= 25°C unless otherwise noted

J

FGH40N6S2D

90

PACKAGE LIMITED

80

70

60

50

40

30

20

, DC COLLECTOR CURRENT (A)

CE

I

10

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

Figure 1. DC Collector Current vs Case

Temperature

1000

100

f

= 0.05 / (t

MAX1

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

10

, OPERATING FREQUENCY (kHz)

MAX

f

(DUTY FACTOR = 50%)

R

= 0.27oC/W, SEE NOTES

θJC

TJ = 125oC, RG = 3Ω, L = 200µH, V

1

1

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

d(OFF)I

ON2

+ t

d(ON)I

+ E

OFF

)

)

CE

= 390V

T

75oC

C =

VGE = 15V

VGE = 10V

6010 30

Figure 3. Operating Frequency vs Collector to

Emitter Current

125

TJ = 150oC, RG = 3Ω, V

100

75

50

25

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V, L = 100µH

GE

300 400200100 500 600

7000

Figure 2. Minimum Switching Safe Operating Area

13

11

9

7

5

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

t

3

91112 15

VCE = 390V, RG = 3Ω, TJ = 125oC

I

SC

t

SC

10 16

VGE, GATE TO EMITTER VOLTAGE (V)

13 14

500

450

400

350

300

, PEAK SHORT CIRCUIT CURRENT (A)
I

250

Figure 4. Short Circuit Withstand Time

SC

40

DUTY CYCLE < 0.5%, VGE =10V
PULSE DURATION = 250µs

35

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0.0 0.4

0.2
, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

TJ = 150oC

0.8 1.0

0.6 1.2 1.4

TJ = 25oC

TJ = 125oC

1.6 1.8 2.0 2.2 2.4

40

DUTY CYCLE < 0.5%, VGE =15V
PULSE DURATION = 250µs

35

30

25

20

15

10

5

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0.0 0.4 0.6 1.2 1.40.2 0.8 1.0 1.6 1.8 2.0 2.2 2.4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ = 150oC

TJ = 25oC

TJ = 125oC

Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage

©2002 Fairchild Semiconductor Corporation FGH40N6S2D RevA4