Fairchild Semiconductor FGH30N6S2, FGB30N6S2, FGP30N6S2 Datasheet

FGH30N6S2 / FGP30N6S2 / FGB30N6S2

600V, SMPS II Series N-Channel IGBT

FGH30N6S2 / FGP30N6S2 / FGB30N6S2

August 2003

General Description

The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau V oltage SMPS II IGBTs combin­ing the fast swit ching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa­bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de­vices are ideally suited for high voltage switched mode pow­er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits

• Full bridge topologies

• Half bridge topologies

• Push-Pull circuits

• Uninterruptible power supplies

• Zero voltage and zero current switching circuits

Formerly Developmental Type TA49367.

Package

TO-247 E

COLLECTOR

(Back-Metal)

C

G

TO-220AB

Features

• 100kHz Op eration at 390V, 14A

• 200kHZ Operation at 390V, 9A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . .90ns at TJ = 125

• Low Gate Charge . . . . . . . . . 23nC at V

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .150mJ

• Low Conduction Loss

Symbol

E

C

G

TO-263AB

G

G

E

COLLECTOR

(Flange)

GE

C

= 15V

E

o

C

Device Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

BV

CES

I

C25

I

C110

I

CM

V

GES

V

GEM

SSOA Switching Safe Operating Area at T

E

AS

P

T

T

STG

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction t em perat ure.

©2003 Fairchild Semiconductor Corporation

Collector to Emitter Breakdown Voltage 600 V
Collector Current Continuous, TC = 25°C 45 A
Collector Current Continuous, TC = 110°C 20 A
Collector Current Pulsed (Note 1) 108 A
Gate to Emitter Voltage Continuous ±20 V
Gate to Emitter Voltage Pulsed ±30 V

= 150°C, Figure 2 60A at 600V

J

Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V 150 mJ
Power Dissi pation Total TC = 25°C 167 W

D

Power Dissipation Derating T
Operating Junction Temperature Range -55 to 150 °C

J

> 25°C 1.33 W/°C

C

Storage Junction Temperature Range -55 to 150 °C

FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

30N6S2 FGH30N6S2 TO-247 Tube N/A 30 Units
30N6S2 FGP30N6S2 TO-220AB Tube N/A 50 Units
30N6S2 FGB30N6S2 TO-263AB Tube N/A 50 Units
30N6S2 FGB30N6S2T TO-263AB 330mm 24mm 800 Units

FGH30N6S2 / FGP30N6S2 / FGS30N6S2

Electrical Characteristics

T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off State Characteristics

BV
BV

I

CES

I

GES

Collector to Emitter Breakdown Volt age IC = 250µA, VGE = 0 600 - - V

CES

Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 20 - - V

ECS

Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 100 µA

= 125°C- - 2 mA

T

J

Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA

On State Characteristics

V

CE(SAT)

Collector to Emitter Saturation Vo ltage IC = 12A,

V

= 15V

GE

= 25°C-2.02.5V

T

J

T

= 125°C- 1.72.0 V

J

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

GEP

Gate Charge IC = 12A,

= 300V

V

CE

Gate to Emitter Threshold Voltage IC = 250µA, V
Gate to Emitter Plateau Voltage IC = 12A, VCE = 300V - 6.5 8.0 V

V

= 15V - 23 29 nC

GE

V

= 20V - 26 33 nC

GE

= 600V 3.5 4.3 5.0 V

CE

Switching Characteristics

SSOA Switching SOA

t

d(ON)I

t

d(OFF)I

E
E
E

t

d(ON)I

t

d(OFF)I

E
E
E

Current Turn-On Delay Tim e IGBT and Diode at TJ = 25°C,

t

Current Rise Time - 10 - ns

rI

Current Turn-Off Delay Time - 40 - ns
Current Fall Time - 53 - ns

t

fI

Turn-On Energy (Note 2) - 55 - µJ

ON1

Turn-On Energy (Note 2) - 110 - µJ

ON2

Turn-Off Energy (Note 3) - 100 150 µJ

OFF

Current Turn-On Delay Tim e IGBT and Diode at TJ = 125°C
Current Rise Time - 17 - ns

t

rI

Current Turn-Off Delay Time - 73 100 ns
Current Fall Time - 90 100 ns

t

fI

Turn-On Energy (Note 2) - 55 - µJ

ON1

Turn-On Energy (Note 2) - 160 200 µJ

ON2

Turn-Off Energy (Note 3) - 250 350 µJ

OFF

TJ = 150°C, RG = 10Ω, VGE =
15V, L = 100µH, V

= 12A,

I

CE

V

= 390V,

CE

= 15V,

V

GE

= 10Ω

R

G

= 600V

CE

L = 200µH
Test Circuit - Figure 20

= 12A,

I

CE

V

= 390V,

CE

= 15V,

V

GE

= 10Ω

R

G

L = 200µH
Test Circuit - Figure 20

60 - - A

-6-ns

-11-ns

Thermal Characteristics

R

NOTE:

2.

Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
of the IGBT only. E
as the IGBT. The diode type is specified in figure 20.

3. Tur n-O ff Energy Loss (E

the input pulse and ending at the point where the collector current equals zero (I
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc­es the true total Turn- Off Energy Loss.

©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1

Thermal Resistance Junction-Case - - 0.75 °C/W

θJC

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T

ON2

) is defined as the integral of the instantaneous power loss starting at the trailing edge of

OFF

= 0A). All devices were tested per

CE

ON1

is the turn-on loss

J

Typical Performance Curves

FGH30N6S2 / FGP30N6S2 / FGS30N6S2

50

40

30

20

10

, DC COLLECTOR CURRENT (A)

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

Figure 1. DC Collector Current vs Case

Temperature

1000

T

C

75oC

VGE = 10V VGE = 15V

f

= 0.05 / (t

MAX1

100

f

= (PD - PC) / (E

MAX2

= CONDUCTION DISSIPATION

P

C

(DUTY FA CTOR = 50%)

R

= 0.49oC/W, SEE NOTES

ØJC

, OPERATING FREQUENCY (kHz)

TJ = 125oC, RG = 3Ω, L = 200µH, V

MAX

f

10

1

+ t

ON2

d(ON)I

+ E

OFF

)

)

= 390V

CE

10

d(OFF)I

, COLLECTOR TO EMITTER CURRENT (A)

I

CE

20

Figure 3. Operating Frequency vs Collector to

Emitter Current

70

60

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

TJ = 150oC, RG = 10Ω, V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V, L = 100µH

GE

300 400200100 500 600

Figure 2. Minimum Switching Safe Operating Area

12

s)

µ

10

8

6

4

2

, SHORT CIRCUIT W ITHSTAND TIME (

SC

30

t

VCE = 390V , RG = 10Ω, TJ = 125oC

I

t

SC

9 10111213141516

VGE, GAT E TO EMITTER VOLTAGE (V)

SC

Figure 4. Short Circuit Withstand Time

350

300

250

200

150

100

7000

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

18

DUTY CYCLE < 0.5%, V

16

PULSE DURATION = 250µs

14

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0.75

0.50 1.00

= 10V

GE

TJ = 150oC

TJ = 25oC

1.50 2.25

V

CE

1.25

, COLLECTOR TO EMITTER VOLTAGE (V)

1.75

TJ = 125oC

2.00

18

DUTY CYCLE < 0.5%, VGE =15V

16

PULSE DURATION = 250

14

12

10

8

6

4

2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

.5 1 1.50 2.0 2.25.75 1.751.25

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

µ

s

TJ = 150oC

TJ = 125oC

TJ = 25oC

Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage

©2003 Fairchild Semiconductor Corporation FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1