Fairchild Semiconductor FGH20N6S2D, FGB20N6S2D Datasheet
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth
TM
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
July 2002
Diode
General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge, plateau voltage and high
avalanche capability (UIS). These LGC devices shorten
delay times, and reduce the power requirement of the gate
drive. These devices are ideally suited for high voltage
switched mode power supply applications where low
conduction loss, fast s wit ching times and UIS capabilit y are
essential. SMPS II LGC devices have been specially
designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49332
(Diode formerly Developmental Type TA49469)
Package
TO-247 E
C
G
TO-220AB
Features
• 100kHz Op eration at 390V, 7A
• 200kHZ Operation at 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . .85ns at TJ = 125
• Low Gate Charge . . . . . . . . . 30nC at V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . .100mJ
• Low Conduction Loss
• Low E
• Soft Recovery Diode
E
C
G
on
TO-263AB
G
o
C
= 15V
GE
Symbol
C
G
E
COLLECTOR (FLANGE)
Device Maximum Ratings T
Symbol Parameter Ratings Units
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA Switching Safe Operating Area at T
E
AS
P
T
T
STG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction t em perat ure.
©2002 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage 600 V
Collector Current Continuous, TC = 25°C 28 A
Collector Current Continuous, TC = 110°C 13 A
Collector Current Pulsed (Note 1) 40 A
Gate to Emitter Voltage Continuous ±20 V
Gate to Emitter Voltage Pulsed ±30 V
Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V 100 mJ
Power Dissi pation Total TC = 25°C 125 W
D
Power Dissipation Derating T
Operating Junction Temperature Range -55 to 150 °C
J
Storage Junction Temperature Range -55 to 150 °C
= 25°C unless otherwise noted
C
= 150°C, Figure 2 35A at 600V A
J
> 25°C 1.0 W/°C
C
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
E
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
20N6S2D FGH20N6S2D TO-247 N/A 30
20N6S2D FGP20N6S2D TO-220AB N/A 50
20N6S2D FGB20N6S2D TO-263AB N/A 50
20N6S2D FGB20N6S2DT TO-263AB 24mm 800 units
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
Electrical Characteristics
TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BV
I
CES
I
GES
Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V
CES
Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA
T
= 125°C- - 2.0 mA
J
Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA
On State Characteristics
V
CE(SAT)
V
Collector to Emitter Saturation Voltage IC = 7.0A,
= 15V
V
GE
Diode Forward Voltage IEC = 7.0A - 1.9 2.7 V
EC
T
= 25°C-2.22.7V
J
= 125°C- 1.92.2 V
T
J
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
V
GEP
Gate Charge IC = 7.0A,
= 300V
V
CE
Gate to Emitter Threshold Voltage IC = 250µA, V
Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V - 6.5 8.0 V
V
= 15V - 30 36 nC
GE
V
= 20V - 38 45 nC
GE
= 600V 3.5 4.3 5.0 V
CE
Switching Characteristics
SSOA Switching SOA T
t
d(ON)I
t
d(OFF)I
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
d(OFF)I
E
ON1
E
ON2
E
OFF
Current Turn-On Delay Time IGBT and Diode at TJ = 25°C,
t
Current Rise Time - 4.5 - ns
rI
Current Turn-Off Delay Time - 87 - ns
t
Current Fall Time - 50 - ns
fI
Turn-On Energy (Note 1) - 25 - µJ
Turn-On Energy (Note 1) - 85 - µJ
Turn-Off Energy (Note 2) - 58 75 µJ
Current Turn-On Delay Time IGBT and Diode at TJ = 125°C
Current Rise Time - 4.5 - ns
t
rI
Current T urn-Off Delay Time - 120 145 ns
Current Fall Time - 85 105 ns
t
fI
Turn-On Energy (Note 1) - 20 - µJ
Turn-On Energy (Note 1) - 125 140 µJ
Turn-Off Energy (Note 2) - 135 180 µJ
Diode Reverse Recovery Time IEC = 7A, dIEC/dt = 200A/µs - 26 31 ns
t
rr
= 150°C, RG = 25Ω, VGE =
J
15V, L = 0.5mH V
I
= 7A,
CE
= 390V,
V
CE
= 15V,
V
GE
R
= 25Ω
G
= 600V
CE
L = 0.5mH
Test Circuit - Figure 26
I
= 7A,
CE
= 390V,
V
CE
= 15V,
V
GE
R
= 25Ω
G
L = 0.5mH
Test Circuit - Figure 26
= 1A, dIEC/dt = 200A/µs - 20 24 ns
I
EC
35 - - A
-7.7-ns
-7-ns
Thermal Characteristics
R
NOTE:
1.
Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
of the IGBT only. E
as the IGBT. The diode type is specified in figure 26.
2. Tur n- Off E nergy Loss ( E
the input pulse and ending at the point where the collector current equals zero (I
JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
Thermal Resistance Junction-Case IGBT - - 1.0 °C/W
θJC
Diode 2.2 °C/W
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
ON2
) is defined as the integral of the instantaneous power loss starting at the trailing edge of
OFF
= 0A). All devices were tested per
CE
ON1
is the turn-on loss
J
Typical Performance Curves
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D
30
V
= 15V
25
20
15
10
, DC COLLECTOR CURRENT (A)
5
CE
I
0
25 75 100 125 150
50
TC, CASE TEMPERATURE (oC)
GE
Figure 1. DC Collector Current vs Case
Temperature
700
400
f
= 0.05 / (t
MAX1
100
, OPERATING FREQUENCY (kHz)
MAX
f
20
= (PD - PC) / (E
f
MAX2
P
= CONDUCTION DISSIPATION
C
(DUTY FACTOR = 50%)
R
= 0.27oC/W, SEE NOTES
ØJC
TJ = 125oC, RG = 25Ω, L = 500µH, V
1
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
VGE = 10V
+ t
d(OFF)I
ON2
d(ON)I
+ E
VGE = 15V
)
)
OFF
CE
= 390V
T
75oC
C =
2010
Figure 3. Operating Frequency vs Collector to
Emitter Current
40
TJ = 150oC, RG = 25Ω, V
35
30
25
20
15
10
5
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
= 15V, L = 500µH
GE
300 400200100 500 600
7000
Figure 2. Minimum Switching Safe Operating Area
12
VCE = 390V, RG = 25Ω, TJ = 125oC
10
t
SC
8
6
4
, SHORT CIRCUIT WITHSTAND TIME (µs)
SC
t
2
91112
10 15
VGE, GATE TO EMITTER VOLTAGE (V)
I
SC
13 14
210
180
150
120
90
60
Figure 4. Short Circuit Withstand Time
, PEAK SHORT CIRCUIT CURRENT (A)
SC
I
14
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
12
10
8
6
4
2
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
0.50 1.0
0.75
= 15V
GE
TJ = 150oC
TJ = 125oC
1.5 1.75
1.25 2.0 2.25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
TJ = 25oC
2.5 2.75
14
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
12
10
8
6
4
2
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
0.50 1.0 1.5 2.0 2.50.75
= 10V
GE
TJ = 150oC
TJ = 125oC
1.751.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 25oC
2.25
Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage
©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
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