Fairchild Semiconductor FFPF40U60S Datasheet
FFPF40U60S
Features
• High v ol tage and high rel ia bility
• High speed switching
• Low forward voltage
Applications
• General purpose
• Switc hing mode po w er supply
• Free-wheeling diode for motor application
• Power switching circuits
1 2
ULTRA FAST RECOVERY POWER RECTIFIER
TO-220F
FFPF40U60S
1. Cathode 2. Anode
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitiv e Reverse Volt age 600 V
Average Rectified Forward Current @ TC = 100°C40 A
Non-repetitive Peak Surge Current
60Hz Single Ha lf- Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
TC=25°°°°C unless otherwise noted
240 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical C haract eri stics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maxi mum Therm al Resist ance, Junction to Case 0.7 °C/W
TC=25 °°°°C unless otherwise noted
Maximum Instantaneous Forward Voltage
I
I
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
=40A, di/dt = 200A/µs)
F
Avalanche Energy 1.0 mJ
= 40A
F
= 40A
F
@ rated V
= 25 °C
T
C
T
= 100 °C
C
TC = 25 °C
R
T
= 100 °C
C
2.1
1.9
20
200
110
10
550
V
µA
ns
A
nC
©2000 Fai r ch i ld Semiconductor Inter national
Rev. F, September 2000
Typical C h aracteristic s
FFPF40U60S
80
TC = 100oC
[A]
F
10
TC = 25oC
1
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
400
300
200
Capacitance , Cj [pF]
100
Typical Capacitance
at 0V = 403 pF
1000
100
A]
µ
[
R
10
1
0.1
Reverse Current , I
0.01
1E-3
TC = 100oC
TC = 25oC
100 200 300 400 500 600
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Revers e Voltag e
100
[ns]
rr
90
80
70
IF = 40A
TC = 25oC
0.1 1 10 100
Reverse Voltage , VR [V]
Figure 3. Typical Junction Capacitance
16
14
[A]
rr
12
10
8
6
4
2
Reverse Recovery Current , I
0
100 500
IF = 40A
TC = 25oC
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
vs. di/dt
Reverse Recovery Time , t
60
100 500
di/dt [A/µs]
Figure 4. Typical Reverse Recovery Time
vs. di/dt
60
[A]
50
F(AV)
40
30
20
10
DC
Averag e Forwa rd Cur rent , I
0
60 80 100 120 140 160
Case Temperature , TC [oC]
Figure 6. Forward Current Derati ng Curve
©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000
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