Fairchild Semiconductor FFPF14X150S Datasheet
Features
• High v ol tage and high reliability
• High speed switching
• Low forward voltage
FFPF14X150S
FFPF14X150S
Applications
• Suitable for damper diode in horizontal
deflec tion circuits
1 2
TO-220F
1. Cathode 2. Anode
DAMPER DIODE
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repeti tiv e Reve rse Voltage 1500 V
Average Rectified Forward Current @ TC = 125°C14 A
Non-repetitive Peak Surge Current
60Hz Single H a lf- Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Maxi mum Ther m al Resistance, Junction to Case 1.5 °C/W
Electrical C haract eri stics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
t
fr
V
FRM
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
I
I
Maximum Instantaneous Reverse Current
@ rated V
Maximum Reverse Recovery Time
(I
=1A, di/dt = 50A/µs)
F
Maximum Forward Recovery Time
(I
=6.5A, di/dt = 50A/µs)
F
Maximum Forward Recovery Voltage - - 13 V
TC=25°°°°C unless otherwise noted
TC=25 °°°°C unless otherwise no t ed
= 14A
F
= 14A
F
TC = 25 °C
R
= 25 °C
T
C
T
= 125 °C
C
T
= 125 °C
C
140 A
-
-
-
-
--120ns
--290ns
-
-
-
-
2.4
2.1
20
300
V
µA
©2000 Fai r ch i ld Semiconductor Inter national
Rev. F, September 2000
Typical C h aracteristicsTypical C h aracteristics
FFPF14X150S
100
[A]
F
10
TJ = 125oC
1
TJ = 25oC
Forward Current , I
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
400
350
300
250
200
150
100
Capacitance , Cj [pF]
50
0
0.1 1 10 100
Reverse Voltage , VR [V]
Typical Capacitance
at 0V = 330 pF
1000
100
A]
µ
[
R
10
0.1
Reverse Cur rent , I
0.01
TJ = 125oC
1
0 300 600 900 1200 1500
TJ = 100oC
TJ = 25oC
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Revers e Voltag e
300
[ns]
rr
200
100
Reverse Recovery Time , t
0
12345678910
di/dt = 50A/µs
di/dt = 100A/µs
Forward Current , IF [A]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. Forward Current
1000
[nC]
rr
800
600
400
200
di/dt = 100A/µs
di/dt = 50A/µs
Stored Recovery Charge , Q
0
12345678910
Forward Current , IF [A]
Figure 5. Typical Stored Charge
20
[A]
F(AV)
15
10
5
DC
Average Forward Current , I
0
80 100 120 140 160
Case Temperature , TC [oC]
Figure 6. Forward Current Derati ng Curve
vs. Forward Current
©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000
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