Fairchild Semiconductor FFPF10U20S Datasheet

FFPF10U20S

Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switc hing mod e po w er supply
1 2

ULTRA FAST RECOVERY POWER RECTIFIER

TO-220F
FFPF10U20S
1. Cathode 2. Anode
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitiv e Reverse Volt age 200 V Average Rectified Forward Current @ TC = 100°C10 A Non-repetitive Peak Surge Current
60Hz Single Ha lf- Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
TC=25°°°°C unless otherwise noted
100 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical C haract eri stics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maxi mum Therm al Resist ance, Junction to Case 5.0 °C/W
TC=25 °°°°C unless otherwise noted
Maximum Instantaneous Forward Voltage I I
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (I
=10A, di/dt = 200A/µs)
F
Avalanche Energy 0.5 - - mJ
= 10A
F
= 10A
F
@ rated V
= 25 °C
T
C
T
= 100 °C
C
TC = 25 °C
R
T
= 100 °C
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
1.0
10
100
35
2.5 45
V
µA
ns
A
nC
©2000 Fai r ch i ld Semiconductor Inter national
Rev. F, September 2000

Typical C h aracteristic sTypical C h aracteristic s

FFPF10U20S
50
10
[A]
F
1
TC = 100oC
TC = 25oC
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
400
300
200
Typical Ca pac ita nce at 0V = 286 pF
1000
100
A]
µ
[
R
10
1
0.1
Reverse Current , I
0.01
0.001 0 50 100 150 200
TC = 100oC
TC = 25oC
Reverse Voltage , VR [V]

Figure 2. Typical Reverse Current

vs. Revers e Voltag e

40
[ns]
rr
35
30
IF = 10A Tc = 25oC
Capacitance , Cj [pF]
100
0.1 1 10 100
Reverse Voltage , VR [V]

Figure 3. Typical Junction Capacitance

6
IF = 10A
5
[A]
rr
4
3
2
1
TC = 25oC
Reverse Recovery Current , I
0
100 500
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current

vs. di/dt

25
Reverse Recovery Time , t
20
100 500
di/dt [A/µs]

Figure 4. Typical Reverse Recovery Time

vs. di/dt
16
[A]
14
F(AV)
12
10
8
6
4
2
Averag e Forwa rd Cur rent , I
0
60 80 100 120 140 160
DC
Case Temperature , TC [oC]

Figure 6. Forward Current Derati ng Curve

©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000
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