Fairchild Semiconductor FFPF05U60S Datasheet

FFPF05U60S

Features

• High v ol tage and high rel ia bility

• High speed switching

• Low forward voltage

Applications

• General purpose

• Switc hing mode po w er supply

• Free-wheeling diode for motor application

• Power switching circuits

1 2

ULTRA FAST RECOVERY POWER RECTIFIER

TO-220F

FFPF05U60S

1. Cathode 2. Anode

Absolute Maximum Ratings

Symbol Parameter Value Units

V

RRM

I

F(AV)

I

FSM

T

J, TSTG

Peak Repetitiv e Reverse Volt age 600 V
Average Rectified Forward Current @ TC = 100°C5 A
Non-repetitive Peak Surge Current

60Hz Single Ha lf- Sine Wave

Operating Junction and Storage Temperature - 65 to +150 °C

TC=25°°°°C unless otherwise noted

30 A

Thermal Characteristics

Symbol Parameter Value Units

R

θJC

Electrical C haract eri stics

Symbol Parameter Min. Typ. Max. Units

V

FM

*

I

RM

*

t

rr

I

rr

Q

rr

W

AVL

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Maxi mum Therm al Resist ance, Junction to Case 5.0 °C/W

TC=25 °°°°C unless otherwise noted

Maximum Instantaneous Forward Voltage

I
I

Maximum Instantaneous Reverse Current

Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I

=5A, di/dt = 200A/µs)

F

Avalanche Energy 1.0 mJ

= 5A

F

= 5A

F

@ rated V

= 25 °C

T

C

T

= 100 °C

C

TC = 25 °C

R

T

= 100 °C

C

2.3

2.2

2.5
25

80

5.5

220

V

µA

ns

A

nC

©2000 Fai r ch i ld Semiconductor Inter national

Rev. F, September 2000

Typical C h aracteristic s

FFPF05U60S

20

10

[A]

F

TC = 100oC

1

TC = 25oC

Forward Current , I

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage , VF [V]

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

50

25

Capacitance , Cj [pF]

0.1 1 10 100

Reverse Voltage , VR [V]

Typical Capacitance
at 0V = 30 pF

100

10

A]

µ

[

R

1

0.1

0.01

Reverse Current , I

1E-3

1E-4

TC = 100oC

TC = 25oC

100 200 300 400 500 600

Reverse Voltage , VR [V]

Figure 2. Typical Reverse Current

vs. Revers e Voltag e

90

IF = 5A

80

[ns]

rr

70

60

50

40

Reverse Recovery Time , t

30

100 500

di/dt [A/µs]

TC = 25oC

Figure 3. Typical Junction Capacitance

Figure 4. Typical Reverse Recovery Time

vs. di/dt

10

9

[A]

rr

8
7
6
5
4
3
2
1

Reverse Recovery Current , I

0

100 500

IF = 5A
TC = 25oC

di/dt [A/µs]

Figure 5. Typical Reverse Recovery Current

8

[A]

7

F(AV)

6

5

4

3

2

1

Average Forward Current , I

0

60 80 100 120 140 160

DC

Case Temperature , TC [oC]

Figure 6. Forward Current Derati ng Curve

vs. di/dt

©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000