Fairchild Semiconductor FFPF04U40DN Datasheet

FFPF04U40DN

Features

• Ultrafast with soft recovery

• Low forward voltage

Applications

• Power switching circuits

• Output rectifiers

• Freewheeling diodes

• Switc hing mod e po w er supply

1 2 3

ULTRA FAST RECOVERY POWER RECTIFIER

TO-220F

FFPF04U40DN

1. Anode 2.Cathode 3. An ode

Absolute Maximum Ratings

Symbol Parameter Value Units

V

RRM

I

F(AV)

I

FSM

T

J, TSTG

Peak Repetitiv e Reverse Volt age 400 V
Average Rectified Forward Current @ TC = 100°C4 A
Non-repetitive Peak Surge Current

60Hz Single Ha lf- Sine Wave

Operating Junction and Storage Temperature - 65 to +150 °C

(per diode) TC=25°°°°C unless otherwise noted

40 A

Thermal Characteristics

Symbol Parameter Value Units

R

θJC

Electrical C haract eri stics

Symbol Parameter Min. Typ. Max. Units

V

FM

*

I

RM

*

t

rr

I

rr

Q

rr

W

AVL

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Maxi mum Therm al Resist an ce, Junction to Ca se 10 °C/W

(per diode) TC=25 °°°°C unless otherwise noted

Maximum Instantaneous Forward Voltage
I
I

Maximum Instantaneous Reverse Current

Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I

=4A, di/dt = 200A/µs)

F

Avalanche Energy 1.0 - - mJ

= 4A

F

= 4A

F

@ rated V

= 25 °C

T

C

T

= 100 °C

C

TC = 25 °C

R

T

= 100 °C

C

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1.4

1.3

10

100

45

3.0
68

V

µA

ns

A

nC

©2000 Fai r ch i ld Semiconductor Inter national

Rev. F, September 2000

Typical C h aracteristic sTypical C h aracteristic sTypical C h aracteristic sTypical C h aracteristic s

FFPF04U40DN

30

10

[A]

F

TC = 100oC

1

TC = 25oC

Forward Current , I

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage , VF [V]

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

200

150

100

Capacitance , Cj [pF]

50

0.1 1 10 100

Reverse Voltage , VR [V]

Typical Capacitanc e
at 0V = 138 pF

1000

A]

µ

[

Reverse Current , I

R

0.001

100

10

1

0.1

0.01

TC = 100oC

TC = 25oC

50 100 150 200 250 300 350 400

Reverse Voltage , VR [V]

Figure 2. Typical Reverse Current

vs. Revers e Voltag e

50

IF = 4A

45

[ns]

rr

40

35

30

25

Reverse Recovery Time , t

20

100 500

di/dt [A/µs]

TC = 25oC

Figure 3. Typical Junction Capacitance

Figure 4. Typical Reverse Recovery Time

vs. di/dt

6

IF = 4A

5

[A]

rr

4

3

2

1

TC = 25oC

Reverse Recovery Current , I

0

100 500

di/dt [A/µs]

Figure 5. Typical Reverse Recovery Current

6

[A]

5

F(AV)

4

3

2

1

DC

Average Forward Current , I

0

60 80 100 120 140 160

Case Temperature , TC [oC]

Figure 6. Forward Current Derating Curve

vs. di/dt

©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000