Fairchild Semiconductor FFPF04F150S Datasheet

Features

• High v ol tage and high r el ia bi lity

• High speed switching

• Low forward voltage

FFPF04F150S

FFPF04F150S

Applications

• Suitable for damper diode in horizontal
deflec tion circuits

1 2

TO-220F

1. Cathode 2. Anode

DAMPER DIODE

Absolute Maximum Ratings

Symbol Parameter Value Units

V

RRM

I

F(AV)

I

FSM

T

J, TSTG

Peak Repetit iv e Rever se Volt age 1500 V
Average Rectified Forward Current @ TC = 125°C4 A
Non-repetitive Peak Surge Current

60Hz Single H a lf- Sine Wave

Operating Junction and Storage Temperature - 65 to +150 °C

Thermal Characteristics

Symbol Parameter Value Units

R

θJC

Maxi mum Ther m al Resis t ance, Junct i on to Case 5.0 °C/W

Electrical C haract eri stics

Symbol Parameter Min. Typ. Max. Units

V

FM

*

I

RM

*

t

rr

t

fr

V

FRM

* Pulse Test: Pulse Width=300µs, Duty Cycle=2%

Maximum Instantaneous Forward Voltage
I
I

Maximum Instantaneous Reverse Current

@ rated V

Maximum Reverse Recovery Time
(I

=1A, di/dt = 50A/µs)

F

Maximum Forward Recovery Time
(I

=6.5A, di/dt = 50A/µs)

F

Maximum Forward Recovery Voltage - - 19 V

TC=25°°°°C unless otherwise noted

TC=25 °°°°C unless otherwise no t ed

= 4A

F

= 4A

F

TC = 25 °C

R

= 25 °C

T

C

T

= 125 °C

C

T

= 125 °C

C

40 A

-

-

-

-

--170ns

--450ns

-

-

-

-

1.5

1.4

5

250

V

µA

©2000 Fai r ch i ld Semiconductor Inter national

Rev. F, September 2000

Typical C h aracteristic sTypical C h aracteristic s

FFPF04F150S

30

10

[A]

F

TJ = 125oC

1

TJ = 25oC

Forward Current , I

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage , VF [V]

Figure 1. Typical Forward Voltage Drop

vs. Forward Current

100

80

60

40

Capacitance , Cj [pF]

20

0

0.1 1 10 100

Reverse Voltage , VR [V]

Typical Capacitance
at 0V = 63 pF

1000

A]

µ

[

Reverse Current , I

100

R

0.1

0.01

0.001

TJ = 125oC

10

1

0 300 600 900 1200 1500

TJ = 100oC

TJ = 25oC

Reverse Voltage , VR [V]

Figure 2. Typical Reverse Current

vs. Revers e Voltag e

400

[ns]

rr

300

200

100

Reverse Recovery Time , t

0

12345678910

di/dt = 50A/µs

di/dt = 100A/µs

Forward Current , IF [A]

Figure 3. Typical Junction Capacitance

Figure 4. Typical Reverse Recovery Time

vs. Forward Current

2000

[nC]

rr

1500

1000

500

di/dt = 100A/µs

di/dt = 50A/µs

Stored Recovery Charge , Q

0

12345678910

Forward Current , IF [A]

Figure 5. Typical Stored Charge

6

[A]

5

F(AV)

4

3

2

1

DC

Average Forward Current , I

0

80 100 120 140 160

Case Temperature , TC [oC]

Figure 6. Forward Current Derati ng Curve

vs. Forward Current

©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000