Fairchild Semiconductor FFP20U60DN Datasheet
FFP20U60DN
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
Applications
• General purpose
• Switching mode power supply
• Free-wheeling diode for motor application
• Power switching circuits
1 2 3
ULTRA FAST RECOVERY POWER RECTIFIER
TO-220
FFP20U60DN
1. Anode 2.Cathode 3. Anode
Absolute Maximum Ratings (per diode) T
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitive Reverse Voltage 600 V
Average Rectified Forward Current @ TC = 100°C20 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
=25°°°°C unless otherwise noted
C
120 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical Characteristics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Thermal Resistance, Junction to Case 1.25 °C/W
(per diode) TC=25 °°°°C unless otherwise noted
Maximum Instantaneous Forward Voltage
I
I
Maximum Instantaneous Reverse Current
Maximum Reverse Rec overy T ime
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
=20A, di/dt = 200A/µs)
(I
F
Avalanche Energy 1.0 mJ
= 20A
F
= 20A
F
@ rated V
TC = 25 °C
R
T
= 25 °C
C
= 100 °C
T
C
T
= 100 °C
C
2.2
2.0
10
100
90
8
360
V
µA
ns
A
nC
©2000 Fairchild Semiconductor International
Rev. F, September 2000
Typical CharacteristicsTypical Characteristics
FFP20U60DN
40
10
[A]
TC = 100oC
F
TC = 25oC
1
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
200
150
100
Capacitance , Cj [pF]
50
1
0.1 1 10 100
Reverse Voltage , VR [V]
Typical Ca pacitance
at 0V = 178 pF
1000
100
A]
µ
[
R
Reve rs e Cu rr e n t , I
10
1
0.1
0.01
1E-3
TC = 100oC
TC = 25oC
100 200 300 400 500 600
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage
100
IF = 20A
90
[ns]
rr
80
70
60
50
Reverse Recovery Time , t
40
100 500
di/dt [A/µs]
TC = 25oC
Figure 3. Typical Junction Capacitance
Figure 4. Typical Rever se Recovery Time
vs. di/dt
16
14
[A]
rr
12
10
8
6
4
2
Reverse Recovery Current , I
0
100 500
IF = 20A
TC = 25oC
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
30
[A]
25
F(AV)
20
15
10
5
DC
Average Forward Current , I
0
60 80 100 120 140 160
Case Temperature , TC [oC]
Figure 6. Forward Current Derating Curve
vs. di/dt
©2000 Fairchild Semiconductor International Rev. F, September 2000
Loading...