Fairchild Semiconductor FDZ208P Datasheet
January 2003
FDZ208P
FDZ208P
P-Channel 30 Volt PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 30 Volt P-Channel
Trench II Process with ± 25 Volts Vgs. Abs. Max Gate
Rating for the ultimate low Rds Battery Protection
MOSFET. This MOSFET also embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low R
DS(ON)
Applications
• Battery management
• Load switch
• Battery protection
Pin 1
Pin 1
D D
D
D
D
D
D
D
D
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
S
S
S
DG
Bottom
.
Features
• –12.5 A, –30 V. R
R
• Occupies only 14 mm2 of PCB area. Only 42% of
the area of SO-8
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• 3.5 x 4 mm2 footprint
• High power and current handling capability
F208P
= 10.5 mΩ @ VGS = –10 V
DS(ON)
= 16.5 mΩ @ VGS = –4.5 V
DS(ON)
G
S
D
Top
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage ± 25 V
GSS
ID Drain Current – Continuous (Note 1a) –12.5 A
– Pulsed –60
Power Dissipation (Steady State) (Note 1a) 2.2 PD
(Note 1a)
TJ, T
Operating and Storage Junction Temperature Range –55 to +150 °C
stg
1.0
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 56 °C/W
θJA
R
Thermal Resistance, Junction-to-Ball (Note 1) 4.5 °C/W
θJB
R
Thermal Resistance, Junction-to-Case (Note 1) 0.6 °C/W
θJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
208P FDZ208P 7’’ 8mm 3000 units
2003 Fairchild Semiconductor Corporation FDZ208P Rev. C1 (W)
FDZ208P
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
DSS
I
GSSF
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage Current,
ID = –250 µA, Referenced to 25°C –20 mV/°C
VGS = –25 V, VDS = 0 V –100 nA
Forward
I
Gate–Body Leakage Current,
GSSR
VGS = 25 V, VDS = 0 V 100 nA
Reverse
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.5 –3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
ID = –250 µA, Referenced to 25°C 5 mV/°C
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –12.5 A
VGS = –4.5 V, ID = –9.5 A
VGS = –10 V,ID = –12.5A,TJ=125°C
9
13
11.7
10.5
16.5
15
mΩ
On–State Drain Current VGS = –10 V, VDS = –5 V –30 A
gFS Forward Transconductance VDS = –10 V, ID = –12.5 A 40 S
Dynamic Characteristics
C
Input Capacitance 2409 pF
iss
C
Output Capacitance 614 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –15 V, V
f = 1.0 MHz
= 0 V,
GS
300 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 13 24 ns
d(on)
tr Turn–On Rise Time 11 21 ns
t
Turn–Off Delay Time 74 119 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 25 35 nC
Qgs Gate–Source Charge 5 nC
Qgd Gate–Drain Charge
VDD = –15 V, ID = –1 A,
VGS = –10 V, R
GEN
= 6 Ω
VDS = –15 V, ID = –12.5 A,
VGS = –5 V
42 68 ns
10 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.8 A
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 29.5 nS
Qrr Diode Reverse Recovery Charge
VGS = 0 V, IS = –1.8 A (Note 2)
IF = 12.5 A,
diF/dt = 100 A/µs
–1.2 V
–0.7
30.2 nC
Notes: 1. R
junction to the circuit board side of the solder ball, R
the copper chip carrier. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the
θJA
and R
θJC
are guaranteed by design while R
θJB
θJB
a) 56°C/W when
, is defined for reference. For R
mounted on a 1in2 pad
of 2 oz copper
is determined by the user's board design.
θJA
, the thermal reference point for the case is defined as the top surface of
θJC
b) 119°C/W when mounted
on a minimum pad of 2 oz
copper
FDZ208P Rev. C1 (W)
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