Fairchild Semiconductor FDZ204P Datasheet
March 2003
FDZ
204P
FDZ204P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ204P minimizes both PCB space
and R
. This BGA MOSFET embodies a
DS(ON)
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low R
DS(ON)
Applications
• Battery management
.
Features
• –4.5 A, –20 V. R
R
• Occupies only 4 mm2 of PCB area.
Less than 40% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Ultra-low Qg x R
• High power and current handling capability.
= 45 mΩ @ VGS = –4.5 V
DS(ON)
= 75 mΩ @ VGS = –2.5 V
DS(ON)
figure-of-merit.
DS(ON)
• Load switch
• Battery protection
DDD
S
S
G
S
SS
P in 1
F204P
G
S
Bottom
Absolute Maximum Ratings T
Top
o
=25
C unless otherwise noted
A
D
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage ±12 V
GSS
ID Drain Current – Continuous (Note 1a) –4.5 A
– Pulsed –20
PD Power Dissipation (Steady State) (Note 1a) 1.8 W
TJ, T
Operating and Storage Junction Temperature Range –55 to +150 °C
STG
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 67 °C/W
θJA
R
Thermal Resistance, Junction-to-Ball (Note 1) 11 °C/W
θJB
R
Thermal Resistance, Junction-to-Case (Note 1) 1 °C/W
θJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
204P FDZ204P 7’’ 8mm 3000 units
2003 Fairchild Semiconductor Corporation FDZ204P Rev. D2 (W)
FDZ
204P
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
ID = –250 µA, Referenced to 25°C –17 mV/°C
Coefficient
Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.6 –0.9 –1.5 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –4.5 A
VGS = –2.5 V, ID = –3.5 A
VGS = –4.5 V, ID = –4.5A,TJ=125°C
3 mV/°C
37
50
57
65
45
75
On–State Drain Current VGS = –4.5 V, VDS = –5 .0 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –4.5 A 15 S
Dynamic Characteristics
C
Input Capacitance 884 pF
iss
C
Output Capacitance 258 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
103 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 12 22 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 36 58 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 9 13 nC
Qgs Gate–Source Charge 2 nC
Qgd Gate–Drain Charge
VDD = –6 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –4.5 A,
VGS = –4.5 V
24 38 ns
3 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.5 A
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 25 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. R
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
θJA
the circuit board side of the solder ball, R
copper chip carrier. R
θJC
and R
θJB
, is defined for reference. For R
θJB
are guaranteed by design while R
VGS = 0 V, IS = –1.5 A (Note 2) –0.76 –1.2 V
IF = –5.5 A,
diF/dt = 100 A/µs
, the thermal reference point for the case is defined as the top surface of the
θJC
is determined by the user's board design.
θJA
26 nC
mΩ
a) 67 °C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
Scale 1 : 1 on letter size paper
2. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 155 °C/W when mounted
on a minimum pad of 2 oz
copper
FDZ204P Rev. D2 (W)
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