Fairchild Semiconductor FDW9926A Datasheet
FDW9926A
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench MOSFET
July 2003
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Applications
• Battery protection
• Load switch
• Power management
G2
S2
S2
D2
S1
S1
D1
TSSOP-8
Pin 1
G1
Features
• 4.5 A, 20 V. R
• Optimized for use in battery circuit applications
• Extended V
GSS
• High performance trench technology for extremely
low R
DS(ON)
• Low profile TSSOP-8 package
= 32 mΩ @ VGS = 4.5 V
DS(ON)
R
= 45 mΩ @ VGS = 2.5 V
DS(ON)
range (±10V) for battery applications
1
2
3
4
8
7
6
5
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
±10
Drain Current – Continuous (Note 1a) 4.5 A
– Pulsed 30
Total Power Dissipation (Note 1a) 1.0 W
(Note 1b)
0.6
Operating and Storage Junction Temperature Range –55 to +150
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 125
(Note 1b)
208
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
9926A FDW9926A 13’’ 12mm 3000 units
2003 Fairchild Semiconductor Corporation
FDW9926A Rev D (W)
V
°C
Electrical Characteristics T
FDW9926A
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
20 V
12
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage
VGS = ±8 V, VDS = 0 V ±100
mV/°C
µA
nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 4.5 A
VGS = 2.5 V, ID = 3.8 A
V
= 4.5 V, ID = 4.5A, TJ=125°C
GS
0.6 1.0 1.5 V
–3
24
34
33
32
45
48
mV/°C
mΩ
On–State Drain Current VGS = 4.5 V, VDS = 5 V 15 A
Forward Transconductance VDS = 5 V, ID = 4.5 A 19 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance 630 pF
Output Capacitance 150 pF
Reverse Transfer Capacitance
Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4
VDS = 10 V, V
f = 1.0 MHz
GS
= 0 V,
85 pF
Ω
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 8 16 ns
Turn–On Rise Time 8 16 ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 15 26 ns
Turn–Off Fall Time
Total Gate Charge 6.1 9 nC
Gate–Source Charge 1.1 nC
VDS = 10 V, ID = 4.5 A,
VGS = 4.5 V
Gate–Drain Charge
4 8 ns
1.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain–Source Diode Forward Current 0.83 A
Drain–Source Diode Forward
VGS = 0 V, IS = 0.83 A (Note 2) 0.69 1.2 V
Voltage
Diode Reverse Recovery Time 14 nS
Diode Reverse Recovery Charge
IF = 4.5 A,
diF/dt = 100 A/µs
4 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
a) R
θJA
b) R
θJA
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
is 208 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
is determined by the user's board design.
θCA
FDW9926A Rev. D (W)