Fairchild Semiconductor FDW254P Datasheet
FDW254P
P-Channel 1.8V Specified PowerTrench
MOSFET
FDW254P
August 2000
PRELIMINARY
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
Features
• –9.2 A, –20 V. R
R
R
= 0.012 Ω @ VGS = –4.5 V
DS(ON)
= 0.015 Ω @ VGS = –2.5 V
DS(ON)
= 0.0215 Ω @ VGS = –1.8 V
DS(ON)
drive voltage (1.8V – 8V).
• Rds ratings for use with 1.8 V logic
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
D
S
S
D
TSSOP-8
Pin 1
G
S
S
D
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
• Low gate charge
• High performance trench technology for extremely
low R
DS(ON)
• Low profile TSSOP-8 package
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage -20 V
Gate-Source Voltage
±8
Drain Current – Continuous (Note 1) -9.2 A
– Pulsed -50
Power Dissipation (Note 1a) 1.3 W
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
0.6
°C
V
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 96
(Note 1b)
208
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
254P FDW254P 13’’ 12mm 3000 units
2000 Fairchild Semiconductor Corporati on
°C/W
FDW254P Rev C (W)
FDW254P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
===∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = –250 µA
GS
I
= –250 µA, Referenced to 25°C
D
–20 V
–11
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = –8 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 8 V VDS = 0 V 100 nA
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
===∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS, ID = –250 µA
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –4.5 V, ID = –9.2 A
= –2.5 V, ID = –7.9 A
V
GS
= –1.8 V, ID = –6.5 A
V
GS
=–4.5 V, ID =–9.2 A, TJ=125°C
V
GS
–0.4 –0.6 –1.5 V
2
9
11
14
12
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
Forward Transconductance VDS = –5 V, ID = –9.2 A 54 S
12
15
21.5
18
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 5878 pF
Output Capacitance 994 pF
Reverse Transfer Capacitance
= –10 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
559 pF
Switching Characteristics (Note 2)
t
T
T
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 15 27 ns
Turn–On Rise Time 15 27 ns
= –10 V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
GEN
= 6 Ω
Turn–Off Delay Time 210 336 ns
Turn–Off Fall Time
Total Gate Charge 60 96 nC
Gate–Source Charge 7 nC
V
= –10 V, ID = –9.2 A,
DS
= –4.5 V
V
GS
Gate–Drain Charge
100 160 ns
13 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
a) R
b) R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current –1.2 A
Drain–Source Diode Forward
VGS = 0 V, IS = –1.2 A (Note 2) –0.5 –1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
θJA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
θJA
is determined by the user's board design.
θCA
FDW254P Rev. C (W)
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