Fairchild Semiconductor FDW2509NZ Datasheet
February 2003
FDW2509NZ
Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
FDW2509NZ
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild’s Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate drive
voltage (2.5V – 12V).
Applications
Li-Ion Battery Pack
G
2
S
2
S
2
D
2
G
1
S
1
S
1
D
1
TSSOP-8
Pin 1
Features
• 7.1 A, 20 V. R
R
• Extended V
• ESD protection diode (note 3)
• High performance trench technology for extremely
low R
DS(ON)
• Low profile TSSOP-8 package
= 20 mΩ @ VGS = 4.5 V
DS(ON)
= 26 mΩ @ VGS = 2.5 V
DS(ON)
range (±12V) for battery applications
GSS
Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
V
Drain-Source Voltage 20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 30
PD Power Dissipation for Single Operation
TJ, T
STG
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a)
7.1 A
(Note 1a)
1.6 W
(Note 1b)
±12
1.1
°C
Thermal Characteristics
(Note 1a)
R
θJA
Thermal Resistance, Junction-to-Ambient
77
(Note 1b)
114
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2509NZ FDW2509NZ 13’’ 12mm 3000 units
2003 Fairchild Semiconductor Corporation
FDW2509NZ Rev B1 (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Breakdown Voltage Temperature
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 4.5 V, VDS = 5 V 15 A
D(on)
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
V
= ±12 V, VDS = 0 V
GS
V
= VGS, ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 4.5 V, ID = 7.1 A
= 2.5 V, ID = 6.2 A
V
GS
= 4.5 V, ID = 7.1A, TJ=125°C
V
GS
20 V
11
mV/°C
µA
± 10 µA
0.6 0.8 1.5 V
–3
15
18
20
29
20
26
mV/°C
mΩ
gFS Forward Transconductance VDS = 5 V, ID = 7.1 A 36 S
Dynamic Characteristics
C
Input Capacitance 1263 pF
iss
C
Output Capacitance 327 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.9
VDS = 10 V, V
f = 1.0 MHz
= 0 V,
GS
179 pF
Ω
FDW2509NZ
Switching Characteristics
t
Turn–On Delay Time 11 20 ns
d(on)
tr Turn–On Rise Time 15 27 ns
t
Turn–Off Delay Time 27 43 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 13 19 nC
Qgs Gate–Source Charge 2 nC
Qgd Gate–Drain Charge
(Note 2)
= 10 V, ID = 1 A,
V
DD
= 4.5 V, R
V
GS
GEN
= 6 Ω
12 22 ns
V
= 10 V, ID = 7.1 A,
DS
V
= 4.5 V
GS
4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Cont inuous Drain–S ource Diode Forward Current 1.3 A
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Rec o very T ime IF = 7.1 A, diF/dt = 100 A/µs 20 nS
Qrr Diode Reverse Recovery Charge 14 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
a) R
is 77°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
θJA
is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
b) R
θJA
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
VGS = 0 V, IS = 1.3 A
(Note 2)
1.2 V
FDW2509NZ Rev. B1 (W)
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