Fairchild Semiconductor FDW2504P Datasheet
FDW2504P
FDW2504P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
April 2000
PRELIMINARY
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
G2
S2
S2
D2
G1
S1
S1
D1
TSSOP-8
Pin 1
Features
• –3.8 A, –20 V, R
R
• Extended V
• Low gate charge
• High performance trench technology for extremely
low R
• Low profile TSSOP-8 package
GSS
DS(ON)
1
2
3
4
= 0.043 Ω @ VGS = –4.5 V
DS(ON)
= 0.070 Ω @ VGS = –2.5V
DS(ON)
range (±12V) for battery applications
8
7
6
5
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) -3.8 A
– Pulsed -30
Power Dissipation (Note 1a) 1.0 W
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
±12
0.6
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 125
(Note 1b)
208
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2504P FDW2504P 13’’ 12mm 3000 units
1999 Fairchild Semiconductor Corporation
FDW2504P Rev. C (W)
V
°C
Electrical Characteristics T
FDW2504P
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = –250 µA
ID = –250 µA,Referenced to 25°C –16 mV/°C
–20 V
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
V
GS(t h)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V, ID = –3.8 A
VGS = –2.5 V, ID = –3.0 A
VGS=–4.5 V, ID =–3.8A, TJ=125°C
–0.6 –1 –1.5 V
0.036
0.056
0.049
On–State Drain Current VGS = –4.5 V, VDS = –5 V –15 A
Forward Transconductance VDS = –5 V, ID = –3.5 A 13.2 S
3 mV/°C
0.043
0.070
0.069
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1015 pF
Output Capacitance 446 pF
Reverse Transfer Capacitance
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
118 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 18 32 ns
VDD = –5 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 34 55 ns
Turn–Off Fall Time
Total Gate Charge 9.7 16 nC
Gate–Source Charge 2.2 nC
VDS = –5 V, ID = –3.8 A,
VGS = –4.5 V
Gate–Drain Charge
34 55 ns
2.4 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
a) R
b) R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current –0.83 A
Drain–Source Diode Forward
VGS = 0 V, IS = –0.83 A (Note 2) –0.7 –1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
θJA
is guaranteed by design while R
θJC
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
is determined by the user's board design.
θCA
µA
Ω
FDW2504P Rev. C (W)
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