Fairchild Semiconductor FDW2502P Datasheet
FDW2502P
FDW2502P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
May 2000
PRELIMINARY
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
G2
S2
S2
D2
G1
S1
S1
D1
TSSOP-8
Pin 1
Features
• –4.4 A, –20 V. R
• Extended V
• High performance trench technology for extremely
low R
• Low profile TSSOP-8 package.
DS(ON)
GSS
.
1
2
3
4
= 0.035 Ω @ VGS = –4.5 V
DS(ON)
R
= 0.057 Ω @ VGS = –2.5 V.
DS(ON)
range (±12V) for battery applications.
8
7
6
5
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) –4.4 A
– Pulsed –30
Power Dissipation for Single Operation (Note 1a) 1.0 W
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
±12
0.6
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 125
(Note 1b)
208
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2502P FDW2502P 13’’ 12mm 3000 units
2000 Fairchild Semiconductor Corporation
FDW2502P Rev. C1 (W)
V
°C
Electrical Characteristics T
FDW2502P
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C –17 mV/°C
–20 V
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 12 V VDS = 0 V 100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C 3.1 mV/°C
VGS = –4.5 V, ID = –4.4 A
VGS = –4.5 V, ID = –4.4 ,TJ=125°C
VGS = –2.5 V, ID = –3.3 A
–0.4 -1.0 –1.5 V
0.028
0.039
0.043
On–State Drain Current VGS = –4.5 V, VDS = –5 V –30 A
Forward Transconductance VDS = –5 V, ID = –4.4 A 17 S
0.035
0.056
0.057
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1330 pF
Output Capacitance 552 pF
Reverse Transfer Capacitance
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
153 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 12 25 ns
Turn–On Rise Time 19 40 ns
Turn–Off Delay Time 60 100 ns
Turn–Off Fall Time
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
37 70 ns
Total Gate Charge 14 20 nC
Gate–Source Charge 3.0 nC
Gate–Drain Charge
VDS = –5 V, ID = –4.4 A,
VGS = –4.5 V
3.9 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
a) R
b) R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current –0.83 A
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
θJA
is guaranteed by design while R
θJC
is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
θCA
VGS = 0 V, IS = –0.83 A (Note 2) -0.7 –1.2 V
is determined by the user's board design.
µA
Ω
FDW2502P Rev. C1 (W)
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